SEMICONDUCTOR DEVICE AND METHOD OF INSPECTING AN ELECTRICAL CHARACTERISTIC OF A SEMICONDUCTOR DEVICE
A semiconductor device is provided with an electrode pad; and a lower layer arranged under the electrode pad. The electrode pad includes a slit section, penetrating a whole thickness of the electrode pad from a higher surface to a lower surface in contact with the lower layer; a contact start region, arranged in the higher surface, on which a probe makes a contact; and an inspection region, arranged in the higher surface, on which the probe makes an inspection upon the semiconductor. The slit section includes a first group of aperture open to the inspection region; a second group of aperture open to the contact start region smaller than the first group of aperture; and a vacant region able to store a part of shavings produced by the probe while shifting from the contact start region to the inspection region, by grinding the higher surface of the electrode pad.
1 . A semiconductor device comprising:
an electrode pad; and
a lower layer arranged under said electrode pad,
wherein said electrode pad comprises:
a slit section including at least one slit which is formed to penetrate a whole thickness of said electrode pad from a higher surface to a lower surface in contact with said lower layer;
a contact start region, arranged in said higher surface, on which a probe makes a contact; and
an inspection region, arranged in said higher surface, on which said probe makes an inspection upon said semiconductor device,
wherein said slit section comprises:
a first group of aperture open to said inspection region; and
a second group of aperture open to said contact start region smaller than said first group of aperture.
2 . The semiconductor device according to claim 1 ,
wherein said slit section comprises:
a plurality of slits,
wherein an interval between each of said plurality of slits is smaller than a thickness of said probe.
3 . The semiconductor device according to claim 2 ,
wherein each of said plurality of slits comprises:
a polygonal shape.
4 . The semiconductor device according to claim 2 ,
wherein each of said plurality of slits comprises:
a triangular shape with one vertex included in said contact start region and two vertexes included in said inspection region.
5 . The semiconductor device according to claim 2 ,
wherein each of said plurality of slits comprises:
an oval shape.
6 . A method of inspecting an electrical characteristic of a semiconductor device, comprising:
making a contact between a probe and contact start region arranged in a higher surface of an electrode pad;
shifting said probe from said contact start region to an inspection region of said electrode pad;
grinding with said probe a higher surface of said electrode pad;
pushing with said probe shavings produced while said grinding into a slit section of said electrode pad;
creating a shaving pile with shavings remaining on said higher surface of said electrode pad; and
providing an electrical signal to said electrode pad via said probe.