Thin channel device and fabrication method with a reverse embedded stressor

1. A method for inducing stress in a semiconductor layer, comprising: providing a substrate comprising a first semiconductor layer, a dielectric layer, and a second semiconductor layer, said first semiconductor layer being formed directly on the dielectric lager and said dielectric layer being formed directly on the second semiconductor layer; providing a removable buried layer on or in the second semiconductor layer; forming a gate structure with side spacers on the first semiconductor layer; forming recesses down to the removable buried layer in areas for source and drain regions; etching away the removable buried layer to form an undercut below the dielectric layer below the gate structure; forming a stressor layer in the undercut; and forming source and drain regions in the areas for source and drain regions.

2. The method as recited in claim 1 , further comprising forming spacers on sidewalls of the recesses to protect the sidewalls during etching away of the removable buried layer.

3. The method as recited in claim 1 , further comprising forming a device having a channel in the first semiconductor layer, wherein stress of the stressor layer provides stress in the channel.

4. The method as recited in claim 1 , wherein providing the removable buried layer includes implanting ions in the second semiconductor layer to form an amorphized material for the removable buried layer.

5. The method as recited in claim 4 , wherein implanting ions includes implanting at least one of Ge, Si and Xe.

6. The method as recited in claim 1 , wherein the stressor layer is epitaxially grown.

7. The method as recited in claim 1 , wherein forming source and drain regions in the areas for source and drain regions includes:

filling the recesses with a filler material; and

depositing a doped layer on the filler material.

8. The method as recited in claim 7 , wherein the doped layer includes raised source/drain regions.

9. The method as recited in claim 7 , wherein at least one of the filler material and the doped layer includes stress which is induced to the first semiconductor layer.

10. The method as recited in claim 1 , wherein providing the removable buried layer includes forming a selectively removable material on or in the second semiconductor layer to form the removable buried layer.

11. The method as recited in claim 1 , wherein the selectively removable material includes at least one of SiN and SiGe.

12. A method for inducing stress in a semiconductor layer, comprising:

providing a substrate comprising a first semiconductor layer, a dielectric layer, and a second semiconductor layer, said first semiconductor layer being formed directly on the dielectric layer and said dielectric layer being formed directly on the second semiconductor layer;

processing the second semiconductor layer to form an amorphized material;

forming a gate structure with side spacers on the first semiconductor layer;

forming recesses down to the amorphized material in areas for source and drain regions;

forming sidewall spacers on sidewalls of the recesses;

etching away the amorphized material to form an undercut below the dielectric layer below the gate structure;

epitaxially growing a stressor layer on a surface of the second semiconductor layer in the undercut;

filling the recesses with a filler material; and

depositing a doped layer on the filler material to form source and drain regions in the areas for source and drain regions.

13. The method as recited in claim 12 , further comprising forming a device having a channel in the first semiconductor layer, wherein stress of the stressor layer provides stress in the channel.

14. The method as recited in claim 12 , wherein processing the second semiconductor layer includes implanting ions in the second semiconductor layer to form the amorphized material.

15. The method as recited in claim 14 , wherein implanting ions includes implanting at least one of Ge, Si and Xe.

16. The method as recited in claim 12 , wherein the doped layer includes raised source/drain regions.

17. The method as recited in claim 12 , wherein at least one of the filler material and the doped layer includes stress which is induced to the first semiconductor layer.

18. The method as recited in claim 12 , wherein filling the recesses with a filler material includes epitaxially growing the filler material in the recesses.

19. The method as recited in claim 12 , wherein depositing a doped layer on the filler material includes:

epitaxially growing the doped layer to a top surface of the first semiconductor layer; and

epitaxially growing doped raised portions for the source and drain regions.

20. A semiconductor device, comprising:

a substrate comprising a dielectric layer formed between a first semiconductor, a dielectric layer, and a second semiconductor layer, said first semiconductor layer being formed directly on the dielectric layer and said dielectric layer being formed directly on the second semiconductor layer;

a gate structure with side spacers formed on the first semiconductor layer;

recesses formed below areas for source and drain regions, the recesses being filled with a filler material, the source and drain regions being formed on the filler material in the recesses; and

a stressor layer formed between the recesses and below the dielectric layer in an undercut formed by removing a portion of the second semiconductor layer, the stressor layer providing stress to the first semiconductor layer where a device channel is formed.

21. The device as recited in claim 20 , wherein at least a portion of the source and drain regions provide stress to the channel in the first semiconductor layer.

22. The device as recited in claim 20 , wherein the stressor layer includes one of SiGe and SiC.

23. The device as recited in claim 20 , wherein the stressor layer is epitaxially grown.

24. The device as recited in claim 20 , wherein the source and drain regions include portions raised above a top surface of the first semiconductor layer.

25. The device as recited in claim 24 , wherein the raised source and drain regions are silicided.