Device and method for fabricating thin semiconductor channel and buried strain memorization layer

1. A method for inducing stress in a semiconductor layer, comprising:

forming a substrate structure, the substrate structure comprising a semiconductor base layer, a buried dielectric layer formed on the semiconductor base layer, and a semiconductor channel layer formed on the buried dielectric layer;

ion implanting a dopant through an uppermost surface of the semiconductor channel layer and the buried dielectric layer into the semiconductor base layer to form an amorphized material region only in a portion of the semiconductor base layer that is in direct contact with the buried dielectric layer;

depositing a stress layer after the amorphized region is formed, wherein the stress layer is directly on a surface of the semiconductor channel layer that is opposite a surface of the semiconductor channel layer that is in direct contact with the buried dielectric layer;

annealing the substrate structure to memorize stress in a portion of the semiconductor base layer that is in direct contact with the buried dielectric layer by recrystallizing the amorphized material, wherein the memorized stress of the semiconductor base layer induces stress in the semiconductor channel layer;

removing the stress layer; and

forming a gate structure after removing the stress layer, wherein the gate structure is formed on the surface of the semiconductor channel layer that is opposite the surface of the semiconductor channel layer that is in direct contact with the buried dielectric layer, and wherein the gate structure includes an electrode layer and a gate dielectric layer that are separate layers from the substrate structure.

2. The method as recited in claim 1 , further comprising forming a device having a channel in the semiconductor channel layer.

3. The method as recited in claim 1 , wherein implanting ions includes implanting at least one of Ge, Si, Ar, N and Xe.

4. The method as recited in claim 1 , wherein depositing a stress layer includes depositing a silicon nitride layer.

5. The method as recited in claim 1 , wherein depositing a stress layer includes adjusting deposition parameters to adjust a stress provided by the stress layer.

6. The method as recited in claim 1 , wherein depositing a stress layer includes patterning the stress layer.

7. The method as recited in claim 6 , wherein patterning the stress layer includes applying the stress layer in first regions while eliminating the stress layer from second regions.

8. The method as recited in claim 7 , wherein the stress layer in first regions applies stress to enhance drive current and the second regions are not stressed.

9. The method as recited in claim 6 , wherein patterning the stress layer includes applying a first stress layer in first regions and a second stress layer in second regions.

10. The method as recited in claim 9 , wherein the first stress layer provides a first stress in the first regions and the second stress layer provides a second stress in the second regions.

11. The method as recited in claim 1 , wherein the semiconductor base layer is provided for an entire surface of the substrate structure.

12. A method for inducing stress in a semiconductor layer, comprising:

forming a substrate structure, the substrate structure comprising a semiconductor base layer, a buried dielectric layer formed on the semiconductor base layer, and a semiconductor channel layer formed on the buried dielectric layer;

forming a gate structure for a transistor device on the semiconductor channel layer, the semiconductor channel layer including a channel region;

implanting ions selected from the group consisting of Ar, N, Xe and a combination thereof through an uppermost surface of the semiconductor channel layer and the buried dielectric layer into the semiconductor base layer to form an amorphized material only in areas of the semiconductor base layer not protected by the gate structure, wherein a sidewall of the gate structure is aligned with an inner edge of the amorphized material;

depositing a stress layer on the gate structure and the semiconductor channel layer; and annealing the substrate structure to memorize stress in the semiconductor base layer by recrystallizing the amorphized material to impart stress from a direction opposite a side of the semiconductor channel layer including the channel region.

13. The method as recited in claim 12 , wherein the transistor device has a channel in the semiconductor channel layer such that the memorized stress of the semiconductor base layer provides stress in the channel.

14. The method as recited in claim 12 , wherein depositing a stress layer includes depositing a silicon nitride layer.

15. The method as recited in claim 12 , wherein depositing a stress layer includes adjusting deposition parameters to adjust a stress provided by the stress layer.

16. The method as recited in claim 12 , wherein depositing a stress layer includes patterning the stress layer.

17. The method as recited in claim 16 , wherein patterning the stress layer includes applying the stress layer in first regions while eliminating the stress layer from second regions.

18. The method as recited in claim 17 , wherein the stress layer in first regions applies stress to enhance drive current and the second regions are not stressed.

19. The method as recited in claim 16 , wherein patterning the stress layer includes applying a first stress layer in first regions and a second stress layer in second regions.

20. The method as recited in claim 19 , wherein the first stress layer provides a first stress in the first regions and the second stress layer provides a second stress in the second regions.

21. The method as recited in claim 12 , wherein the semiconductor base layer is provided for an entire surface of the substrate structure.