Manufacturing method of semiconductor device including Au bump on seed film

1. A manufacturing method of a semiconductor device, said method comprising:

forming a seed film on a semiconductor chip;

forming a photoresist having an opening above an electrode of the semiconductor chip on the seed film, such that in a plan view, edges of the opening coincide with edges of the electrode;

forming a barrier film on an upper surface of the electrode, said barrier film extending from an edge of the semiconductor device to another edge of the semiconductor device;

forming a first Au bump on the seed film in the opening by electrolytic plating with a current density of 1.5 A/dm 2 or above;

grinding a surface of the first Au bump;

stripping the photoresist; and

removing the seed film by dry-etching,

wherein said barrier film extends with a flat profile and parallel to the upper surface of the electrode from the edge of the semiconductor device to the another edge of the semiconductor device.

2. The manufacturing method of the semiconductor device according to claim 1 , wherein the forming the first Au bump comprises:

forming a second Au bump by electrolytic plating with a current density of 1.0 A/dm 2 or below, and

wherein the first Au bump is formed on the second Au bump.

3. The manufacturing method of the semiconductor device according to claim 1 , wherein in the stripping the photoresist, the photoresist is stripped by using an organic solvent or oxygen plasma ashing.

4. The manufacturing method of the semiconductor device according to claim 1 , wherein the semiconductor chip is formed on a wafer,

wherein an insulation layer is disposed on the wafer, and

wherein the electrode is disposed inside the insulating layer.

5. The manufacturing method of the semiconductor device according to claim 4 , wherein the upper surface of the electrode is co-planar with an upper surface of the insulation layer.

6. The manufacturing method of the semiconductor device according to claim 5 , wherein a bottom surface of the electrode is co-planar with a bottom surface of the insulation layer.

7. The manufacturing method of the semiconductor device according to claim 5 , wherein said barrier film forms a flat plate that extends on the upper surface of the electrode and the upper surface of the insulation layer.

8. The manufacturing method of the semiconductor device according to claim 7 , wherein said forming the seed film comprises disposing the seed film on the barrier film such that the seed film extends parallel to the wafer from an edge of the wafer to another edge of the wafer.

9. The manufacturing method of the semiconductor device according to claim 1 , wherein said forming the seed film comprises disposing the seed film on said barrier film such that the seed film extends parallel to the upper surface of the electrode from the edge of the semiconductor device to the another edge of the semiconductor device.

10. The manufacturing method of the semiconductor device according to claim 1 , further comprising:

forming a second Au bump by electrolytic plating in the opening such that, in the plan view, said edges of the electrode coincide with edges of the second Au bump.

11. The manufacturing method of the semiconductor device according to claim 1 , further comprising:

forming a plurality of ones of the first Au bump on the semiconductor chip, said plurality of ones of the first Au bump having mutually different heights.

12. A manufacturing method of a semiconductor device, said method comprising:

forming a seed film on a semiconductor chip that comprises an electrode;

forming a barrier film on an upper surface of the electrode, said barrier film extending from an edge of the semiconductor device to another edge of the semiconductor device;

forming a photoresist having an opening, having edges aligned with edges of the electrode, above the electrode on the seed film;

electrolytic plating an Au bump on the seed film in the opening;

grinding a surface of the Au bump;

stripping the photoresist; and

dry-etching to remove the seed film,

wherein said barrier film extends with a flat profile parallel to the upper surface of the electrode from the edge of the semiconductor device to the another edge of the semiconductor device.

13. The method of claim 12 , wherein said electrolytic plating is performed with a current density of at least 1.5 A/dm 2 .

14. The method of claim 12 , wherein the semiconductor chip is formed on a wafer,

wherein an insulation layer is disposed on the wafer, and

wherein the electrode is disposed inside the insulating layer.

15. The method of claim 14 , wherein the upper surface of the electrode is co-planar with an upper surface of the insulation layer, and

wherein a bottom surface of the electrode is co-planar with a bottom surface of the insulation layer.

16. The method of claim 15 , wherein said barrier film forms a flat plate on the upper surface of the electrode and the upper surface of the insulation layer.

17. The method of claim 16 , wherein said forming the seed film comprises disposing the seed film on the barrier film such that the seed film extends parallel to the upper surface of the electrode from the edge of the semiconductor device to the another edge of the semiconductor device.

18. The method of claim 12 , further comprising:

forming a plurality of ones of the Au bump on the semiconductor chip, said plurality of ones of the Au bump having mutually different heights.