Three dimensional hexagonal matrix memory array

1. A nonvolatile memory device, comprising a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern,

wherein the nonvolatile memory cells are arranged in a plurality of subarrays which are substantially parallelogram shaped and have a non-square corner.

2. The nonvolatile memory device of claim 1 , wherein:

the plurality of nonvolatile memory cells comprises a plurality of pillar shaped current steering elements; and

the substantially hexagonal pattern comprises a repeating pattern of seven nonvolatile memory cells having a central nonvolatile memory cell surrounded by six other nonvolatile memory cells arranged in a hexagonal layout around the central nonvolatile memory cell.

3. The nonvolatile memory device of claim 1 , wherein the device comprises:

a first nonvolatile memory cell,

a second nonvolatile memory cell, and

a third nonvolatile memory cell;

wherein the first nonvolatile memory cell, the second nonvolatile memory cell, and the third nonvolatile memory cell are equidistant from each other and are located in a same plane.

4. The nonvolatile memory device of claim 3 , wherein the first nonvolatile memory cell, the second nonvolatile memory cell, and the third nonvolatile memory cell have a cell half pitch of less than about 32 nm.

5. The nonvolatile memory device of claim 1 , wherein the device comprises a monolithic, three dimensional array of nonvolatile memory cells.

6. The nonvolatile memory device of claim 1 , wherein each nonvolatile memory cell comprises a one time programmable or a rewritable cell selected from at least one of antifuse, fuse, diode and antifuse arranged in a series, polysilicon memory effect cell, metal oxide memory, switchable complex metal oxide, carbon nanotube memory, graphene switchable resistance material, phase change material memory, conductive bridge element, or switchable polymer memory.