Semiconductor-encapsulating adhesive, semiconductor-encapsulating film-form adhesive, method for producing semiconductor device, and semiconductor device

1. A semiconductor-encapsulating adhesive, comprising:

(a) an epoxy resin;

(b) a compound formed of an organic acid reactive with an epoxy resin and a curing accelerator, wherein the compound is formed prior to use in the semiconductor-encapsulating adhesive;

(c) a polymeric component having a weight-average molecular weight of 10,000 or more; and

(d) a polyimide resin, wherein the polymeric component comprises the polyimide resin, and wherein the polyimide resin has a glass transition temperature of 100° C. or lower.

2. The semiconductor-encapsulating adhesive of claim 1 , wherein (d) the polyimide resin has a weight-average molecular weight of 30,000 or more.

3. The semiconductor-encapsulating adhesive of claim 1 , wherein (a) the epoxy resin is solid at 1 atm and at 25° C.

4. The semiconductor-encapsulating adhesive of claim 1 , wherein (b) the compound formed of an organic acid reactive with an epoxy resin and a curing accelerator is solid at 1 atm and at 25° C.

5. The semiconductor-encapsulating adhesive of claim 1 , wherein (b) the compound formed of an organic acid reactive with an epoxy resin and a curing accelerator has a melting point of 120° C. or higher.

6. The semiconductor-encapsulating adhesive of claim 1 , wherein (b) the compound formed of an organic acid reactive with an epoxy resin and a curing accelerator has an actively reacted range of 120° C. or higher.

7. The semiconductor-encapsulating adhesive of claim 1 , wherein the organic acid is an acid having a carboxyl group.

8. The semiconductor-encapsulating adhesive of claim 1 , wherein the curing accelerator is an imidazole.

9. The semiconductor-encapsulating adhesive of claim 1 , wherein the organic acid is trimesic acid.

10. The semiconductor-encapsulating adhesive of claim 1 , wherein the semiconductor-encapsulating adhesive has a melt viscosity of 250 Pa·s or lower at 350° C. or higher, and a void generation rate of 5% or less when the semiconductor-encapsulating adhesive is compression bonded at 350° C. for 5 seconds or more.

11. A semiconductor-encapsulating film-form adhesive, obtained by forming a semiconductor-encapsulating adhesive of claim 1 into a film-form shape.

12. The semiconductor-encapsulating adhesive according to claim 1 , wherein the curing accelerator is selected from the group consisting of 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenylimidazole and 2-methylimidazole.

13. The semiconductor-encapsulating adhesive according to claim 1 , wherein the organic acid is an aromatic polycarboxylic acid.

14. The semiconductor-encapsulating adhesive according to claim 1 , wherein the organic acid is a benzene polycarboxylic acid.

15. The semiconductor-encapsulating adhesive according to claim 1 , wherein the organic acid is selected from the group consisting of trimesic acid and trimellitic acid.