Memory including vertical bipolar select device and resistive memory element
View Patent ↗A memory includes a first vertical bipolar select device including a first base and a first emitter, a first phase change element coupled to the first emitter, a second vertical bipolar select device including a second base and a second emitter, a second phase change element coupled to the second emitter, and a buried word line contacting the first base and the second base.
1. A memory comprising:
a first vertical bipolar select device including a first base and a first emitter;
a first phase change element coupled to the first emitter;
a second vertical bipolar select device including a second base and a second emitter;
a second phase change element coupled to the second emitter; and
a buried word line contacting the first base and the second base.
2. The memory of claim 1 , wherein the first vertical bipolar select device comprises a first diode, and wherein the second vertical bipolar select device comprises a second diode.
3. The memory of claim 1 , wherein the first vertical bipolar select device comprises a first transistor including a first collector, and wherein the second vertical bipolar select device comprises a second transistor including a second collector.
4. The memory of claim 3 , further comprising a substrate contacting the first collector and the second collector.
5. The memory of claim 1 , further comprising a bit line coupled to the first phase change element and the second phase change element.
6. The memory of claim 1 , further comprising:
a first bit line coupled to the first phase change element; and
a second bit line coupled to the second phase change element.
7. The memory of claim 1 , further comprising shallow trench isolation between the first bipolar select device and the second bipolar select device.