Method of rapid thermal treatment using high energy electromagnetic radiation of a semiconductor substrate for formation of epitaxial materials
View Patent ↗A method for fabricating semiconductor devices includes providing a semiconductor substrate having a surface region containing one or more contaminants and having an overlying oxide layer. In an embodiment, the one or more contaminants are at least a carbon species. The method includes processing the surface region using at least a wet processing process to selectively remove the overlying oxide layer and expose the surface region including the one or more contaminants. The method includes subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants. The method includes removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.
1. A method for fabricating semiconductor devices, the method comprising:
providing a semiconductor substrate having a surface region, the surface region having one or more contaminants, the one or more contaminants including at least a carbon species, the surface region having an overlying oxide layer;
processing the surface region using at least a wet processing process to selectively remove the oxide layer and expose the surface region including the one or more contaminants;
subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 nanometers to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region; and
removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 degrees Celsius to about 600 degrees Celsius in a time period of less than 1 second.
2. The method of claim 1 wherein the one or more contaminants comprise an oxygen species.
3. The method of claim 1 wherein the surface region is maintained in an argon environment while the surface region is being subjected to the high energy electromagnetic radiation.
4. The method of claim 1 wherein the high energy electromagnetic radiation is provided to the surface region to a depth of about 3 microns from the surface region.
5. The method of claim 1 wherein the surface region is an etched region.
6. The method of claim 5 wherein the etched region is provided for a silicon germanium material.
7. The method of claim 1 wherein the overlying oxide layer is a native oxide.
8. The method of claim 1 wherein the high energy electromagnetic radiation is characterized by a single wavelength of light.
9. The method of claim 1 wherein the one or more contaminants comprise a chlorine species.
10. The method of claim 1 wherein the one or more contaminants include a hydrogen species.
11. The method of claim 1 wherein the high energy electromagnetic radiation comprises a flash lamp as a source.
12. A method for fabricating semiconductor devices, the method comprising:
providing a semiconductor substrate having a thickness of material and a recessed surface region provided on a portion of the thickness of material, the recessed surface region has one or more contaminants, the one or more contaminants being at least a carbon species, the surface region having an overlying oxide layer;
processing the recessed surface region using at least a wet processing process to selectively remove the oxide layer and expose the recessed surface region including the one or more contaminants;
subjecting the recessed surface region to a high energy electromagnetic radiation process having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the recessed surface region to greater than 1000 Degree Celsius to remove the one or more contaminants provided on the recessed surface region; and
removing the high energy electromagnetic radiation process to cause a reduction in temperature to about 300 to about 600 Degrees Celsius in a time period of less than 1 second.
13. The method of claim 12 wherein the one or more contaminants include oxygen species.
14. The method of claim 12 wherein the recessed surface region is maintained in an argon environment during the high energy electromagnetic radiation process.
15. The method of claim 12 wherein the high energy electromagnetic radiation process is provided to the recessed surface region to a depth of about 3 microns from the surface region.
16. The method of claim 12 wherein the recessed surface region is an etched region.
17. The method of claim 16 wherein the etched region is provided for a silicon germanium material.
18. The method of claim 12 wherein the overlying oxide layer is a native oxide.
19. The method of claim 12 wherein the high energy electromagnetic radiation process is characterized by a single wavelength of light.
20. The method of claim 12 wherein the one or more contaminants include a chlorine species.
21. The method of claim 12 wherein the one or more contaminants include a hydrogen species.
22. The method of claim 12 wherein the high energy electromagnetic radiation is provided using a flash lamp.