Semiconductor Device and Method of Forming Leadframe as Vertical Interconnect Structure Between Stacked Semiconductor Die
A semiconductor device has a first semiconductor die mounted over a carrier. A leadframe has a plurality of conductive leads and first and second bodies extending from the opposite sides of the conductive leads. The leadframe is mounted to the carrier with the conductive lead disposed over the first semiconductor die and the bodies disposed around the first semiconductor die. An adhesive layer is deposited between the first semiconductor die and conductive leads. A second semiconductor die is mounted over the leadframe and electrically connected to the conductive leads. An encapsulant is deposited over the first semiconductor die. The carrier is removed. A first interconnect structure is formed over a first surface of the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant. The first and second interconnect structures are electrically connected to the first and second bodies of the leadframe.
1 . A method of manufacturing a semiconductor device, comprising:
providing a carrier;
mounting a plurality of first semiconductor die over the carrier;
providing a leadframe having a plurality of conductive leads and bodies extending from the conductive leads;
mounting the leadframe to the carrier with the conductive lead disposed over the first semiconductor die and the bodies disposed around the first semiconductor die;
mounting a plurality of second semiconductor die over the leadframe;
depositing an encapsulant over the first and second semiconductor die;
removing the carrier;
forming an interconnect structure over the encapsulant, the interconnect structure being electrically connected to the bodies of the leadframe; and
singulating the semiconductor device to separate the first semiconductor die.
2 . The method of claim 1 , further including depositing an adhesive layer between the first semiconductor die and conductive leads.
3 . The method of claim 1 , wherein the second semiconductor die is electrically connected to the conductive leads.
4 . The method of claim 1 , further including forming a recess or groove in the conductive leads.
5 . The method of claim 1 , further including forming a protrusion over the conductive leads.
6 . The method of claim 1 , further including forming a heat sink over the second semiconductor die.
7 . The method of claim 1 , further including forming a shielding layer over the second semiconductor die.
8 . A method of manufacturing a semiconductor device, comprising:
providing a carrier;
mounting a first semiconductor die over the carrier;
providing a leadframe having a plurality of conductive leads and bodies extending from the conductive leads;
mounting the leadframe to the carrier with the conductive lead disposed over the first semiconductor die and the bodies disposed around the first semiconductor die;
depositing an encapsulant over the first semiconductor die;
removing the carrier; and
forming an interconnect structure over the encapsulant, the interconnect structure being electrically connected to the bodies of the leadframe.
9 . The method of claim 8 , further including:
mounting a second semiconductor die over the leadframe; and
depositing the encapsulant over the first and second semiconductor die.
10 . The method of claim 9 , wherein the second semiconductor die is electrically connected to the conductive leads.
11 . The method of claim 8 , further including depositing an adhesive layer between the first semiconductor die and conductive leads.
12 . The method of claim 1 , further including removing a portion of a back surface of the first semiconductor die or second semiconductor die.
13 . The method of claim 1 , further including depositing an underfill material under the first semiconductor die.
14 . A method of manufacturing a semiconductor device, comprising:
providing a plurality of first semiconductor die;
mounting a leadframe having a plurality of conductive leads and first bodies extending from the conductive leads over the first semiconductor die with the conductive lead disposed over the first semiconductor die and the first bodies disposed around the first semiconductor die;
depositing a first encapsulant over the first semiconductor die; and
forming a first interconnect structure over a first surface of the first encapsulant, the first interconnect structure being electrically connected to the first bodies of the leadframe.
15 . The method of claim 14 , further including:
mounting a second semiconductor die over the leadframe; and
depositing the first encapsulant over the first and second semiconductor die.
16 . The method of claim 14 , wherein the leadframe includes second bodies extending from the conductive leads opposite the first bodies.
17 . The method of claim 16 , further including forming a second interconnect structure over a second surface of the first encapsulant opposite the first surface of the first encapsulant, the second interconnect structure being electrically connected to the second bodies of the leadframe.
18 . The method of claim 17 , further including forming a conductive via through the first encapsulant between the conductive leads and the second interconnect structure.
19 . The method of claim 14 , further including forming a second encapsulant over the first semiconductor die.
20 . The method of claim 14 , wherein the first bodies are exposed from the semiconductor device.
21 . A semiconductor device, comprising:
a first semiconductor die;
a leadframe having a plurality of conductive leads and first bodies extending from the conductive leads mounted over the first semiconductor die with the conductive lead disposed over the first semiconductor die and the first bodies disposed around the first semiconductor die;
an encapsulant deposited over the first semiconductor die; and
a first interconnect structure formed over a first surface of the encapsulant, the first interconnect structure being electrically connected to the first bodies of the leadframe.
22 . The semiconductor device of claim 21 , further including a second semiconductor die mounted over the leadframe.
23 . The semiconductor device of claim 21 , wherein the leadframe includes second bodies extending from the conductive leads opposite the first bodies.
24 . The semiconductor device of claim 23 , further including a second interconnect structure formed over a second surface of the encapsulant opposite the first surface of the encapsulant, the second interconnect structure being electrically connected to the second bodies of the leadframe.
25 . The semiconductor device of claim 24 , further including a conductive via through the encapsulant between the conductive leads and the second interconnect structure.