Phase change memory structures
View Patent ↗A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
1. A phase change memory cell, comprising:
a first electrode;
a second electrode;
a plurality of pillars located between the first electrode and the second electrode, each of the plurality of pillars having a first end electrically coupled to the first electrode and a second end electrically coupled to the second electrode, wherein each of the plurality of pillars includes a heater material portion and a phase change material portion.
2. The memory cell of claim 1 , wherein for each of the plurality of pillars, the phase change material portion is over the heater material portion.
3. The memory cell of claim 1 , wherein the phase change material portion includes at least one of a group consisting of germanium, antimony, and tellurium.
4. The memory cell of claim 1 , further comprising a base of heater material between the plurality of pillars and the first electrode.
5. The memory cell of claim 1 , wherein each of the plurality of pillars have a width of less than 20 nanometers.
6. The memory cell of claim 1 , wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
7. The memory cell of claim 1 , further comprising an insulating material surrounding the plurality of pillars.
8. The memory cell of claim 1 , wherein:
the phase change material comprises a combination including a first material and a second material;
the first material is one of a class group consisting of a group IB material, a group III material, a group IV material, a group V material, and a group VI material;
the second material is one of the class group but not a same group of the class group as the first material.
9. A phase change memory cell, comprising:
a first electrode;
a second electrode;
a plurality of pillars between the first electrode and the second electrode, each of the plurality of pillars including a first end electrically coupled to the first electrode and a second end electrically coupled to the second electrode, wherein each of the plurality of pillars comprises a heater material portion and a phase change material portion and each of the plurality of pillars has a width of less than 20 nanometers;
an insulating material around each of the plurality of pillars.
10. The memory cell of claim 2 , wherein the phase change material portion includes at least one of a group consisting of germanium, antimony, and tellurium.
11. The memory cell of claim 2 , further comprising a base of heater material between the plurality of pillars and the first electrode.
12. The memory cell of claim 2 , wherein each of the plurality of pillars have a width of less than 20 nanometers.
13. The memory cell of claim 2 , wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
14. The memory cell of claim 5 , wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
15. The memory cell of claim 2 , wherein:
the phase change material comprises a combination including a first material and a second material;
the first material is one of a class group consisting of a group IB material, a group III material, a group IV material, a group V material, and a group VI material;
the second material is one of the class group but not a same group of the class group as the first material.
16. The memory cell of claim 1 , further comprising an insulating material surrounding the plurality of pillars.
17. The memory cell of claim 4 , wherein each of the plurality of pillars have a width of less than 20 nanometers.
18. The memory cell of claim 4 , wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
19. The memory cell of claim 3 , wherein each of the plurality of pillars have a width of less than 20 nanometers.
20. The memory cell of claim 3 , wherein each of the plurality of pillars have a spacing of less than 20 nanometers.