Semiconductor device and method of forming conductive TSV with insulating annular ring
View Patent ↗A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a conductive layer over the semiconductor wafer;
forming a first via through the semiconductor wafer to the conductive layer;
depositing a conductive material in the first via to form a conductive through silicon via (TSV);
after forming the conductive TSV, forming a second via around the conductive TSV through the semiconductor wafer to the conductive layer; and
depositing a first insulating material in the second via to form an insulating annular ring.
2. The method of claim 1 , further including depositing a second insulating material in the first via to form an insulating core within the conductive TSV.
3. The method of claim 1 , further including removing a portion of the conductive TSV to a level below a surface of the semiconductor wafer.
4. The method of claim 1 , wherein the conductive TSV extends above a surface of the semiconductor wafer.
5. The method of claim 1 , wherein a width of the conductive TSV is less than a width of the insulating annular ring.
6. The method of claim 1 , wherein a width of the conductive TSV is greater than a width of the insulating annular ring.
7. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a first via through the semiconductor wafer;
depositing a conductive material in the first via to form a conductive via;
after forming the conductive via, forming a second via around the conductive via through the semiconductor wafer; and
depositing a first insulating material in the second via to form an insulating ring.
8. The method of claim 7 , further including:
forming an insulating layer over the semiconductor wafer; and
forming a conductive layer over the insulating layer.
9. The method of claim 8 , wherein the conductive via and insulating ring extend to the conductive layer.
10. The method of claim 7 , wherein the insulating ring terminates at a surface of the semiconductor wafer.
11. The method of claim 7 , further including depositing a second insulating material in the first via to form an insulating core within the conductive via.
12. The method of claim 7 , further including removing a portion of the conductive via to a level below a surface of the semiconductor wafer.
13. The method of claim 7 , wherein the conductive via extends above a surface of the semiconductor wafer.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a first via through the semiconductor die;
depositing a conductive material in the first via to form a conductive via;
forming a second via outside the conductive via through the semiconductor die; and
depositing a first insulating material in the second via to form an insulating ring.
15. The method of claim 14 , further including:
forming an insulating layer over the semiconductor die; and
forming a conductive layer over the insulating layer.
16. The method of claim 15 , wherein the conductive via and insulating ring extend to the conductive layer.
17. The method of claim 14 , wherein the insulating ring terminates at a surface of the semiconductor die.
18. The method of claim 14 , further including depositing a second insulating material in the first via to form an insulating core within the conductive via.
19. The method of claim 14 , further including removing a portion of the conductive via to a level below a surface of the semiconductor die.
20. The method of claim 14 , wherein the conductive via extends above a surface of the semiconductor die.
21. A semiconductor device, comprising:
a semiconductor die;
a conductive via formed through the semiconductor die including an annular opening formed around the conductive via; and
an insulating material deposited in the annular opening around the conductive via.
22. The semiconductor device of claim 21 , wherein the insulating ring terminates at a surface of the semiconductor die.
23. The semiconductor device of claim 21 , further including an insulating core within the conductive via.
24. The semiconductor device of claim 21 , wherein the conductive via is recessed below a surface of the semiconductor die.
25. The semiconductor device of claim 21 , wherein the conductive via extends above a surface of the semiconductor die.