Methods of forming dielectric material-containing structures
Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
1. A method of forming a structure, comprising:
forming a first mixed phase dielectric over a first material; the first mixed phase dielectric comprising a first homogeneous mixture of two oxides; one of said two oxides of the first homogeneous mixture having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the first homogeneous mixture having a dielectric constant of less than or equal to 20;
forming a single phase dielectric over and directly against the first mixed phase dielectric; the single phase dielectric consisting of a composition having a dielectric constant of greater than or equal to 25;
forming a second mixed phase dielectric over and directly against the single phase dielectric; the second mixed phase dielectric comprising a second homogeneous mixture of two oxides; one of said two oxides of the second homogeneous mixture having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the second homogeneous mixture having a dielectric constant of less than or equal to 20; the first and second mixed phase dielectrics being more amorphous than the single phase dielectric, and being different in composition from one another; and
forming a second material over the second mixed phase dielectric.
2. The method of claim 1 wherein the composition of the single phase dielectric is selected from the group consisting of ZrO, HfO, TaO, TiO and SrTiO; where the chemical formulas indicate the elements contained in the composition and do not imply any particular stoichiometry of such elements.
3. The method of claim 1 wherein the first and second mixed phase dielectrics consist of mixtures selected from the group consisting of ZrAlO, HfAlO, ZrSiO, HfSiO, ZrHfO, ZrTaO, HfTaO, ZrTiO, HfTiO, TaTiO, HfTaTiO and ZrTaTiO; where the chemical formulas indicate the elements contained in the mixture and do not imply any particular stoichiometry of such elements.
4. The method of claim 1 wherein the first material is over a semiconductor substrate.
5. The method of claim 1 wherein the structure is a capacitor.
6. The method of claim 1 wherein the structure is a transistor gate stack; wherein the first material is charge-retaining material, and wherein the second material is control gate material.
7. The method of claim 1 wherein the first material is electrically conductive.
8. The method of claim 1 wherein the first material comprises a segment of a semiconductor substrate between a pair of source/drain regions, and wherein the first mixed phase dielectric is formed directly over said segment.
9. A method of forming a capacitor, comprising:
forming a first capacitor electrode over a monocrystalline silicon substrate;
forming a first mixed phase dielectric over the first capacitor electrode; the mixed phase dielectric comprising a first homogeneous mixture of two oxides; one of said two oxides of the first homogeneous mixture having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the first homogeneous mixture having a dielectric constant of less than or equal to 20;
forming a single phase dielectric over and directly against the first mixed phase dielectric; the single phase dielectric consisting of a composition having a dielectric constant of greater than or equal to 25;
forming a second mixed phase dielectric over and directly against the single phase dielectric; the second mixed phase dielectric comprising a second homogeneous mixture of two oxides; one of said two oxides of the second homogeneous mixture having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the second homogeneous mixture having a dielectric constant of less than or equal to 20; the first and second mixed phase dielectrics being more amorphous than the single phase dielectric, and being different in composition from one another; and
forming a second capacitor electrode over the second mixed phase dielectric.
10. The method of claim 9 wherein the composition of the single phase dielectric is selected from the group consisting of ZrO, HfO, TaO, TiO and SrTiO; where the chemical formulas indicate the elements contained in the composition and do not imply any particular stoichiometry of such elements.
11. The method of claim 9 wherein the first and second mixed phase dielectrics consist of mixtures selected from the group consisting of ZrAlO, HfAlO, ZrSiO, HfSiO, ZrHfO, ZrTaO, HfTaO, ZrTiO, HfTiO, TaTiO, HfTaTiO and ZrTaTiO; where the chemical formulas indicate the elements contained in the mixture and do not imply any particular stoichiometry of such elements.
12. The method of claim 9 wherein the first and second mixed phase dielectrics are formed utilizing atomic layer deposition.