Method for producing memory having a solid electrolyte material region
View Patent ↗A method for producing a solid electrolyte material region for a memory element of a solid electrolyte memory cell. A first material is formed in substantially pure form. A thermal treatment is carried out in the presence of at least one second material, and the chalcogenide material of the solid electrolyte material region thereby being produced.
1. A method for producing a memory including a memory cell, comprising:
forming a solid electrolyte chalcogenide material comprising at least a first element and a second element by
forming a first layer comprising the first element and not the second element; and
applying a thermal treatment to the first layer in a heat treatment environment that includes the second element.
2. The method of claim 1 , wherein:
one of the elements comprises germanium (Ge).
3. The method of claim 2 , wherein:
the other of the elements is selected from the group of: selenium (Se) and sulfur (S).
4. The method of claim 1 , wherein:
the heat treatment environment includes a gas containing the second element.
5. The method of claim 4 , wherein:
the first layer comprises germanium in solid form; and
the gas is selected from hydrogen selenide (H 2 Se) and hydrogen sulfide (H 2 S).
6. The method of claim 1 , wherein:
the heat treatment environment includes a plasma that disassociates the second element from a source gas.
7. The method of claim 1 , further including:
forming the chalcogenide material between a first electrode and a second electrode.
8. A method for producing a memory including a memory cell, comprising:
forming a solid electrolyte chalcogenide material comprising at least a first element and a second element by
forming at least a first layer comprising the first element and not the second element;
forming at least a second layer comprising the second element in direct contact with the first layer; and
applying a thermal treatment to intermix at least the first material and second material to create the chalcogenide material.
9. The method of claim 8 , wherein:
one of the elements comprises germanium (Ge); and
the other of the elements is selected from a group consisting of: selenium (Se) and sulfur (S).
10. The method of claim 8 , wherein:
the thermal treatment is selected from a group consisting of: a rapid thermal anneal (RTA), application of a laser, and application of electromagnetic radiation.
11. The method of claim 8 , further including:
forming additional layers that alternate between layers comprising the first element and substantially not the second element and layers comprising the second element; and
applying the thermal treatment to intermix such additional layers to create the chalcogenide material.
12. The method of claim 8 , wherein:
the thermal treatment is applied in an inert atmosphere that does not include the first or second elements.
13. The method of claim 8 , wherein:
the thermal treatment is applied in an atmosphere that includes at least one of the elements.
14. The method of claim 8 , further including:
forming the chalcogenide material between a first electrode and a second electrode.
15. A method for producing a memory cell, comprising:
depositing a first layer within a contact hole comprising a first element and not a second element; and
intermixing the first layer with at least the second element to form a solid electrolyte chalcogenide material within the contact hole.
16. The method of claim 15 , wherein:
intermixing the first layer with at least the second element includes applying a thermal treatment to the first layer in a heat treatment environment that includes the second element.
17. The method of claim 16 , wherein:
the second element is included within a material selected from: a gas and a liquid.
18. The method of claim 15 , wherein:
one of the elements is germanium; and
the other of the elements is selected from the group of: selenium and sulfur.
19. The method of claim 15 , wherein:
intermixing the first layer with at least the second element includes
depositing a second layer, comprising the second element, in physical contact with the first layer, and
applying a thermal treatment.
20. The method of claim 15 , further including:
forming a first electrode;
depositing the first layer includes depositing the first layer in contact with the first electrode; and
forming a second electrode over the chalcogenide material.