Data management in flash memory using probability of charge disturbances
View Patent ↗A Flash memory system and a method for data management using the system's sensitivity to charge-disturbing operations and the history of charge-disturbing operations executed by the system are described. In an embodiment of the invention, the sensitivity to charge-disturbing operations is embodied in a disturb-strength matrix in which selected operations have an associated numerical value that is an estimate of the relative strength of that operation to cause disturbances in charge that result in data errors. The disturb-strength matrix can also include the direction of the error which indicates either a gain or loss of charge. The disturb-strength matrix can be determined by the device conducting a self-test in which charge-disturb errors are provoked by executing a selected operation until a detectable error occurs. In alternative embodiments the disturb-strength matrix is determined by testing selected units from a homogeneous population.
1. A method of operating a Flash memory system comprising:
recording a running operation history of selected charge-disturbing operations previously executed on the SSD system; and
calculating an estimate of net gain or loss of charges for a memory cell using the operation history, a disturb-strength value for each selected charge-disturbing operation, and a charge gain-loss direction for each selected charge-disturbing operation; and wherein calculating an estimate of net gain or loss of charges for a memory cell further comprises:
calculating percentages for each charge-disturbing operation in the operation history; and
computing a weighted sum of relative strengths of the charge-disturbing operations.
2. A Flash memory system comprising:
a set of Flash memory cells;
a disturb-strength matrix containing a disturb-strength value and a charge gain-loss direction for each selected charge-disturbing operation;
an operation history which is a running record of selected charge-disturbing operations executed by the system; and
a data management unit which uses the disturb-strength matrix along with the operation history to calculate an estimate of net gain or loss of charges for a memory cell; and wherein the data management unit includes means for calculating percentages for each charge-disturbing operation in the operation history; and computing a weighted sum of relative strengths of the charge-disturbing operations.