Manufacturing method for electronic component, electronic component, and electronic equipment
A manufacturing method for electronic device, includes: preparing a first substrate having a plurality of first regions; preparing a second substrate having a plurality of second regions; facing the first region and the second region each other, and connecting the first substrate and the second substrate while disposing at least a part of a functional element within a space between the first region and the second region; obtaining a plurality of first divisional substrates by cutting the first substrate at each of the first regions, after the connecting of the first substrate and the second substrate; forming a sealing film covering the plurality of the first divisional substrates on the second substrate, after cutting the first substrate; obtaining a plurality of second divisional substrates by cutting the second substrate at each of the second regions, after forming the sealing film; and obtaining a plurality of individual electronic devices.
1. An electronic device comprising:
a first substrate;
a second substrate that is a semiconductor substrate, the second substrate having a first surface and a second surface, the first surface facing the first substrate, and the second surface being on a side of the second substrate that is opposite the first surface;
an integrated circuit formed on the second surface of the second substrate;
an oscillator disposed on the first surface of the second substrate between the first substrate and the second substrate, the oscillator being spaced apart from the first substrate;
a sealing layer being a monolithic structure and covering the first substrate and a fringe of the second substrate; and
a through-hole electrode which penetrates the second substrate and connects the oscillator and the integrated circuit.
2. The electronic device according to claim 1 , wherein the first substrate is a glass substrate.
3. An electronic equipment comprising the electronic device according to claim 2 .
4. An electronic equipment comprising the electronic device according to claim 1 .
5. The electronic device according to claim 1 , wherein the sealing layer is an inorganic film.
6. The electronic device according to claim 1 , wherein the sealing layer directly contacts the entire first major surface of the first substrate that is opposite to the second major surface of the first substrate that faces the second substrate.
7. The electronic device according to claim 1 , further comprising a connection terminal provided on the second surface of the second major substrate.
8. An electronic device comprising:
a first substrate having a first major surface and a second major surface;
a second substrate that is a semiconductor substrate, the second substrate having a first major surface and a second major surface, and the first major surface of the second substrate facing the second major surface of the first substrate;
an integrated circuit formed on the second major surface of the second substrate;
an oscillator disposed on the first major surface of the second substrate between the first substrate and the second substrate, the oscillator being spaced apart from the second major surface of the first substrate;
a sealing layer being a monolithic structure and directly contacting the first major surface of the first substrate and a fringe of the first major surface of the second substrate, and
a through-hole electrode which penetrates the second substrate and connects the oscillator and the integrated circuit.
9. The electronic device according to claim 8 , wherein the first substrate is a glass substrate.
10. An electronic equipment comprising the electronic device according to claim 9 .
11. An electronic equipment comprising the electronic device according to claim 8 .
12. The electronic device according to claim 8 , wherein the sealing layer is an inorganic film.
13. The electronic device according to claim 8 , further comprising a connection terminal provided on the second major surface of the second substrate.