Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrate
View Patent ↗A method includes providing a substrate having insulating layers thereon; forming a first trench in a first region of the substrate and a second trench in a second region of the substrate; thermally growing layers of oxide along the sides of the trenches; filling the first trench and the second trench with a polysilicon material, planarizing the polysilicon material, and creating a shallow trench isolation between the first region and the second region, wherein the step f) of creating the shallow trench isolation is performed only after the steps of d) filling and e) planarizing.
1. A method for fabricating an eFuse and a resistor, comprising:
a) providing a substrate having insulating layers thereon;
b) forming a first trench in a first region of the substrate and a second trench in a second region of the substrate;
c) thermally growing layers of oxide along the sides of the trenches, the layers of oxide having an approximately uniform equal thickness in a range of a approximately 20 nm to approximately 50 nm, the oxide being SiO 2 ;
d) filling the first trench and the second trench with a polysilicon material,
e) planarizing the polysilicon material;
f) creating a shallow trench isolation between the first region and the second region, wherein the step f) of creating the shallow trench isolation is performed only after the steps of d) filling and e) planarizing, and then g) creating an eFuse in the first region and a resistor in the second region.
2. The method as claimed in claim 1 , wherein the first trench and the second trench have approximately equal depths into the substrate.
3. The method as claimed in claim 1 , wherein said step of planarizing includes chemically mechanically polishing the polysilicon material.
4. The method as claimed in claim 1 , wherein said step b) of forming includes anisotropically etching the trenches.
5. The method as claimed in claim 4 , wherein said anisotropically etching includes reactive ion etching the trenches.
6. The method as claimed in claim 1 , where said step d) of filling comprises using an LCPVD process to fill the trenches.
7. The method as claimed in claim 1 , wherein said step c) includes using a wet oxidation process.
8. The method as claimed in claim 2 , wherein the approximately equal depths are in a range of approximately 150 nm to approximately 300 nm.
9. The method as claimed in claim 1 , wherein said step d) filling includes depositing the polysilicon material using an LPCVD process.
10. The method as claimed in claim 1 , wherein said step e) planarizing including chemically mechanically polishing the polysilicon material.
11. The method as claimed in claim 1 , wherein said step f) creating a shallow trench isolation includes depositing a nitride layer directly onto the polysilicon material.
12. A method for fabricating an eFuse and a resistor, comprising:
a) providing a substrate having insulating layers thereon;
b) forming a first trench in a first region of the substrate and a second trench in a second region of the substrate;
c) thermally growing layers of oxide along the sides of the trenches, the layers of oxide having an approximately uniform equal thickness in a range of approximately 20 nm to approximately 50 nm, the oxide being SiON;
d) filling the first trench and the second trench with a polysilicon material;
e) planarizing the polysilicon material;
f) creating a shallow trench isolation between the first region and the second region,
wherein the step f) of creating the shallow trench isolation is performed only after the steps of d) filling and e) planarizing, and then
g) creating an eFuse in the first region and a resistor in the second region.
13. The method as claimed in claim 12 , wherein the first trench and the second trench have approximately equal depths into the substrate.
14. The method as claimed in claim 12 , wherein said step of planarizing includes chemically mechanically polishing the polysilicon material.
15. The method as claimed in claim 12 , wherein said step b) of forming includes anisotropically etching the trenches.
16. The method as claimed in claim 15 , wherein said anisotropically etching includes reactive ion etching the trenches.
17. The method as claimed in claim 12 , where said step d) of filling comprises using an LCPVD process to fill the trenches.
18. The method as claimed in claim 12 , wherein said step c) includes using a wet oxidation process.
19. The method as claimed in claim 13 , wherein the approximately equal depths are in a range of approximately 150 nm to approximately 300 nm.
20. The method as claimed in claim 12 , wherein said step d) filling includes depositing the polysilicon material using an LPCVD process.
21. The method as claimed in claim 12 , wherein said step e) planarizing including chemically mechanically polishing the polysilicon material.
22. The method as claimed in claim 12 , wherein said step f) creating a shallow trench isolation includes depositing a nitride layer directly onto the polysilicon material.