IP Library Granted Patent US 8,643,039
Granted Patent B2
US 8,643,039 · App. 13/023,788 · Granted Feb 4, 2014

Lateral semiconductor Light Emitting Diodes having large area contacts

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Quick Facts
Patent No.
US 8,643,039
App. No.
13/023,788
Granted
Feb 4, 2014
Kind
B2
Abstract

Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.

Claims (34)

1. A light emitting diode comprising:

a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;

a reflective anode contact that ohmically contacts the p-type layer and extends on the first face; and

a reflective cathode contact that ohmically contacts the n-type layer and that also extends on the first face;

wherein the anode and cathode contacts extend on the first face to collectively cover at least about 85% of the first face.

2. A light emitting diode according to claim 1 wherein the anode and cathode contacts extend on the first face to collectively cover at least about 90% of the first face.

3. A light emitting diode according to claim 1 wherein the anode and cathode contacts extend on the first face to collectively cover at least about 93% of the first face.

4. A light emitting diode according to claim 1 wherein the anode and cathode contacts extend on the first face to collectively cover substantially all of the first face.

5. A light emitting diode according to claim 1 wherein the anode and cathode contacts extend on the first face in closely spaced apart relation to define a gap that is less than about 75 μm therebetween.

6. A light emitting diode according to claim 1 wherein the anode and cathode contacts extend on the first face in closely spaced apart relation to define a gap that is less than about 50 μm therebetween.

7. A light emitting diode according to claim 1 wherein the anode and cathode contacts extend on the first face in closely spaced apart relation to define a gap that is less than about 30 μm therebetween.

8. A light emitting diode according to claim 1 wherein the cathode contact is larger in area than the anode contact.

9. A light emitting diode according to claim 1 wherein the anode and cathode contacts that both extend on the first face are coplanar.

10. A light emitting diode according to claim 1 further comprising:

a transparent substrate on the second face, the transparent substrate including an inner face adjacent the second face, an outer face remote from the second face that is of smaller area than the inner face, and a sidewall that extends from the outer face to the inner face.

11. A light emitting diode according to claim 10 wherein the sidewall comprises an oblique sidewall that extends at an oblique angle from the outer face towards the inner face.

12. A light emitting diode according to claim 1 in combination with a submount having a submount face and an anode pad and a cathode pad thereon, the light emitting diode being mounted on the submount such that the first face is adjacent the submount face, the outer face is remote from the submount, the anode contact is adjacent the anode pad and the cathode contact is adjacent the cathode pad.

13. A light emitting diode according to claim 12 wherein the anode contact is mounted directly on the anode pad and the cathode contact is mounted directly on the cathode pad.

14. A packaged light emitting diode comprising:

a light emitting diode die comprising:

a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;

an anode contact that ohmically contacts the p-type layer and extends on the first face;

a cathode contact that ohmically contacts the n-type layer and that also extends on the first face, wherein the anode and cathode contacts extend on the first face to collectively cover at least about 85% of the first face; and

a transparent substrate on the second face, the transparent substrate including an inner face adjacent the second face, an outer face remote from the second face and an oblique sidewall that extends at an oblique angle from the outer face towards the second face; and

a submount having a submount face and an anode pad and a cathode pad thereon, the light emitting diode die being mounted on the submount such that the first face is adjacent the submount face, the outer face is remote from the submount, the anode contact is adjacent the anode pad and the cathode contact is adjacent the cathode pad.

15. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts extend on the first face to collectively cover at least about 90% of the first face.

16. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts extend on the first face to collectively cover at least about 93% of the first face.

17. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts extend on the first face to collectively cover substantially all of the first face.

18. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts extend on the first face in closely spaced apart relation to define a gap that is less than about 75 μm therebetween.

19. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts extend on the first face in closely spaced apart relation to define a gap that is less than about 50 μm therebetween.

20. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts extend on the first face in closely spaced apart relation to define a gap that is less than about 30 μm therebetween.

21. A packaged light emitting diode according to claim 14 wherein the cathode contact is larger in area than the anode contact.

22. A packaged light emitting diode according to claim 14 wherein the anode and cathode contacts that both extend on the first face are coplanar.

23. A packaged light emitting diode according to claim 14 wherein the anode contact is mounted directly on the anode pad and the cathode contact is mounted directly on the cathode pad.

Assignments (6)
PATENT SECURITY AGREEMENT Recorded Jun 30, 2025
From: CREELED, INC.; PENGUIN SOLUTIONS CORPORATION (DE); SMART EMBEDDED COMPUTING, INC.; SMART HIGH RELIABILITY SOLUTIONS LLC; SMART MODULAR TECHNOLOGIES, INC.; PENGUIN COMPUTING, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 071755/0001 →
RELEASE OF PATENT SECURITY INTEREST RECORDED AT R/F 058983/0001 Recorded Jun 25, 2025
From: CITIZENS BANK, N.A.
To: SMART MODULAR TECHNOLOGIES, INC.; SMART EMBEDDED COMPUTING, INC.; SMART HIGH RELIABILITY SOLUTIONS LLC; CREELED, INC.
Reel/Frame 071725/0207 →
SECURITY INTEREST Recorded Feb 7, 2022
From: SMART MODULAR TECHNOLOGIES, INC.; SMART HIGH RELIABILITY SOLUTIONS, LLC; SMART EMBEDDED COMPUTING, INC.; CREELED, INC.
To: CITIZENS BANK, N.A.
Reel/Frame 058983/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2021
From: CREE, INC.
To: CREELED, INC.
Reel/Frame 057017/0311 →
CORRECTIVE ASSIGNMENT REEL/FRAME 031236/0514 CORRECTED SPELLING OF NAME IS: ZHIMIN JAMIE YAO HEREBY CONFIRMS ASSIGNOR(S) ASSIGNMENT OF ENTIRE INTEREST. Recorded Sep 26, 2013
From: DONOFRIO, MATTHEW; IBBETSON, JAMES; YAO, ZHIMIN JAMIE
To: CREE, INC.
Reel/Frame 031369/0579 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2013
From: DONOFRIO, MATTHEW; IBBETSON, JAMES; YAO, ZHINMIN JAMLE
To: CREE, INC.
Reel/Frame 031236/0514 →