IP Library Granted Patent US 8,134,216
Granted Patent B2
US 8,134,216 · App. 13/042,444 · Granted Mar 13, 2012

Nuclear batteries

Assignee: Widetronix, Inc.
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Quick Facts
Patent No.
US 8,134,216
App. No.
13/042,444
Granted
Mar 13, 2012
Kind
B2
Abstract

We introduce a new technology for Manufacturable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. The small (submicron) thickness of the active volume of both the isotope layer and the semiconductor device is due to the short absorption length of beta electrons. The absorption length determines the self absorption of the beta particles in the radioisotope layer as well as the range, or travel distance, of the betas in the semiconductor converter which is typically a semiconductor device comprising at least one PN junction. Various devices and methods to solve the current industry problems and limitations are presented here.

Claims (31)

1. A nuclear battery, said nuclear battery comprising:

a P-N semiconductor junction, located between a P-type semiconductor layer and an N-type semiconductor layer;

one or more contacts; and

at least three isotope foils;

wherein said at least three isotope foils comprises a first isotope foil, a second isotope foil, and a third isotope foil;

wherein said first isotope foil is positioned parallel to said P-N semiconductor junction;

said first isotope foil is connected to only one of said P-type semiconductor layer or said N-type semiconductor layer;

said second isotope foil and said third isotope foil are parallel to each other;

said second isotope foil and said third isotope foil are perpendicular to said first isotope foil;

said second isotope foil and said third isotope foil are perpendicular to said P-N semiconductor junction;

said second isotope foil and said third isotope foil are connected to both of said P-type semiconductor layer and said N-type semiconductor layer;

wherein said one or more contacts are connected to at least one of said P-type semiconductor layer or said N-type semiconductor layer.

2. The nuclear battery as recited in claim 1 , wherein said nuclear battery comprising: an NPN structure.

3. The nuclear battery as recited in claim 1 , wherein said nuclear battery comprising: a PNP structure.

4. The nuclear battery as recited in claim 1 , wherein a bias voltage is applied to structure of said nuclear battery.

5. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery is located on an N+ substrate.

6. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery is located on a P+ substrate.

7. The nuclear battery as recited in claim 1 , wherein said one or more contacts are ohmic contacts.

8. The nuclear battery as recited in claim 1 , wherein said one or more contacts are metal contacts.

9. The nuclear battery as recited in claim 1 , wherein said P-type semiconductor layer and said N-type semiconductor layer are SiC semiconductor.

10. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a single junction.

11. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises multiple junctions.

12. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a SiC etch structure.

13. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a thermal oxide structure.

14. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises an oxide passivation structure.

15. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises an amorphous Si structure.

16. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a re-planarized structure.

17. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a rapid-thermal-annealed structure.

18. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a back-side metallization structure.

19. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises a vertical betavoltaic structure.

20. The nuclear battery as recited in claim 1 , wherein structure of said nuclear battery comprises at least one of the following: isotopes Nickel-63, tritium, Scandium Tritide, Titanium Tritide, or promethium-147.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Jan 20, 2026
From: YOUNG, JOHN F.; BARNETT, SUSAN M.; F.J. YOUNG COMPANY
To: WIDETRONIX INC.
Reel/Frame 073512/0684 →
SECURITY INTEREST Recorded Apr 16, 2015
From: WIDETRONIX INC.
To: YOUNG, JOHN F.; BARNETT, SUSAN M.; F.J. YOUNG COMPANY
Reel/Frame 035428/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2011
From: CHANDRASHEKHAR, MVS; THOMAS, CHRISTOPHER; SPENCER, MICHAEL
To: WIDETRONIX INC
Reel/Frame 026676/0687 →
Continuity (6)
Continuation In Part 12888521 · Sep 23, 2010
Continuation In Part 12851555 · Aug 6, 2010
Provisional Application 61250504 · Oct 10, 2009
Provisional Application 61231863 · Aug 6, 2009
Provisional Application 61306541 · Feb 21, 2010
Related Publication 20110241144A1 · Oct 6, 2011