Middle of line structures

1. A contact structure, comprising:

a patterned permanent antireflection coating formed directly on device formed on a substrate, said device having one or more contact pads;

at least one patterned dielectric layer formed on the permanent antireflective coating, the at least one patterned dielectric layer and the permanent antireflective coating forming openings therein, the openings corresponding with locations of the contact pads;

a barrier layer formed in the openings that includes a conductive catalyst; and

conductive contact structures comprising carbon formed in the openings to make electrical contact with the contact pads such that the at least one patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures,

wherein the at least one patterned dielectric layer is a cured product of a dielectric composition comprising a polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers; and wherein the openings in the at least patterned dielectric layer are formed by direct photo patterning of the dielectric composition prior to its curing.

2. The structure as recited in claim 1 , wherein the dielectric composition comprises a polymer, a copolymer, or a blend including at least two of any combination of polymers and/or copolymers, wherein said polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the monomers of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbosilane, oxycarbosilane substituted silsesquioxane, oxycarbosilane substituted siloxane, oxycarbosilane substituted silane, oxycarbosilane substituted carbosilane, and oxycarbosilane substituted oxycarbosilane.

3. The structure as recited in claim 1 , wherein the permanent antireflective coating comprises atoms of M, Carbon and Hydrogen wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La.

4. The structure as recited in claim 1 , wherein the least one patterned dielectric layer has a dielectric constant of no more than 10.

5. The structure as recited in claim 1 , wherein the permanent antireflective coating layer has a dielectric constant of no more than 15.

6. The structure as recited in claim 1 , wherein the conductive contact structures include carbon naotubes or graphene.

7. The interconnect structure as recited in claim 1 , wherein the contact pads include electrical connections to one or more of a source region, a drain region or a gate region of a transistor.

8. The interconnect structure as recited in claim 1 , wherein the contact pads include silicided regions.

9. The interconnect structure as recited in claim 1 , wherein the conductive contact structures include a graduated shape.

10. The interconnect structure as recited in claim 1 , wherein the conductive contact structures include a stepped shape.