Substrate processing apparatus, method of manufacturing semiconductor device and method of cleaning processing vessel
When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
1. A method of manufacturing a semiconductor device, comprising: supplying a processing gas into a processing vessel accommodating a substrate to form a thin film on the substrate; and supplying a pre-mixed gas including a fluorine-containing gas and a nitrogen monoxide gas into the processing vessel through a first cleaning gas supply system while simultaneously supplying the fluorine-containing gas into the processing vessel through a second cleaning gas supply system installed apart from the first cleaning gas supply system so as to remove a deposit containing the thin film adhered to an inside of the processing vessel, wherein the pre-mixed gas includes a gas obtained from decomposing the fluorine-containing gas in a preliminary decomposition chamber and the nitrogen monoxide gas.
2. The method of claim 1 , wherein the pre-mixed gas includes an FNO gas generated by mixing of the fluorine-containing gas with the nitrogen monoxide gas.
3. The method of claim 2 , wherein the FNO gas and the fluorine-containing gas supplied through the second cleaning gas supply system are first mixed in the processing vessel.
4. The method of claim 1 , wherein the pre-mixed gas includes an FNO gas generated by mixing of the gas obtained from decomposing the fluorine-containing gas in the preliminary decomposition chamber with the nitrogen monoxide gas.
5. The method of claim 4 , wherein the FNO gas and the fluorine-containing gas supplied through the second cleaning gas supply system are first mixed in the processing vessel.
6. The method of claim 1 , wherein the fluorine-containing gas includes a fluorine gas or a chlorine fluoride gas.
7. The method of claim 1 , wherein the fluorine-containing gas includes a nitrogen fluoride gas or a fluorocarbon gas.
8. A method of cleaning an inside of a processing vessel comprising: providing the processing vessel configured to process a substrate to form a thin film thereon; and supplying a pre-mixed gas including a fluorine-containing gas and a nitrogen monoxide gas into the processing vessel through a first cleaning gas supply system while simultaneously supplying the fluorine-containing gas into the processing vessel through a second cleaning gas supply system installed apart from the first cleaning gas supply system so as to remove a deposit containing the thin film adhered to the inside of the processing vessel, wherein the pre-mixed gas includes a gas obtained from decomposing the fluorine-containing gas in a preliminary decomposition chamber and the nitrogen monoxide gas.