Semiconductor Device and Method of Forming 3D Inductor from Prefabricated Pillar Frame

1 . A method of making a semiconductor device, comprising:

providing a carrier;

mounting a semiconductor component over the carrier;

forming an inductor core over the carrier;

mounting a pillar frame over the carrier and semiconductor component, the pillar frame including a plurality of bodies with a first portion of the bodies being disposed around the inductor core;

depositing an encapsulant around the semiconductor component, plurality of bodies, and inductor core;

removing a portion of the pillar frame while leaving the first portion of the bodies to form inductor pillars;

forming a first interconnect structure over a first surface of the encapsulant;

removing the carrier; and

forming a second interconnect structure over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form a 3D inductor.

2 . The method of claim 1 , wherein the inductor core includes ferromagnetic material.

3 . The method of claim 1 , wherein removing the portion of the pillar frame further leaves a second portion of the bodies to form an interconnect pillar.

4 . The method of claim 3 , further including stacking a plurality of the semiconductor components electrically connected through the interconnect pillar.

5 . The method of claim 3 , further including disposing a plurality of the semiconductor components side-by-side electrically connected through the interconnect pillar.

6 . The method of claim 1 , further including forming a shielding layer over the semiconductor component.

7 . The method of claim 1 , further including forming an integrated passive device within the first or second interconnect structures.

8 . A method of making a semiconductor device, comprising:

providing a carrier;

mounting a semiconductor component over the carrier;

mounting a pillar frame over the carrier and semiconductor component;

depositing an encapsulant over the semiconductor component and pillar frame;

removing a portion of the pillar frame, wherein a first remaining portion of the pillar frame provides inductor pillars;

forming a first interconnect structure over a first surface of the encapsulant;

removing the carrier; and

forming a second interconnect structure over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form a 3D inductor.

9 . The method of claim 8 , wherein a second remaining portion of the pillar frame provides an interconnect pillar.

10 . The method of claim 8 , wherein the first or second interconnect structure is electrically connected to a contact pad of the semiconductor component.

11 . The method of claim 8 , further including forming a shielding layer over the semiconductor component.

12 . The method of claim 8 , further including forming an integrated passive device within the first or second interconnect structures.

13 . The method of claim 8 , further including forming a discrete semiconductor component over the first interconnect structure.

14 . A method of making a semiconductor device, comprising:

providing a carrier;

mounting a semiconductor component over the carrier;

mounting a pillar frame over the carrier and semiconductor component;

depositing an encapsulant over the semiconductor component and pillar frame;

removing a portion of the pillar frame, wherein a first remaining portion of the pillar frame provides inductor pillars; and

forming a first interconnect structure over a first surface of the encapsulant, the first interconnect structure being electrically connected to the inductor pillars to form a 3D inductor.

15 . The method of claim 14 , further including:

removing the carrier; and

forming a second interconnect structure over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form the 3D inductor.

16 . The method of claim 15 , further including forming an integrated passive device within the first or second interconnect structures.

17 . The method of claim 14 , further including forming an inductor core over the carrier, the inductor pillars being disposed around the inductor core.

18 . The method of claim 14 , wherein a second remaining portion of the pillar frame provides an interconnect pillar.

19 . The method of claim 14 , further including forming a shielding layer over the semiconductor component.

20 . The method of claim 14 , further including forming a plurality of 3D inductors with the inductor pillars.

21 . A semiconductor device, comprising:

a semiconductor component;

an inductor core disposed in proximity to the semiconductor component;

a pillar frame mounted over the semiconductor component and inductor core;

an encapsulant deposited over the semiconductor component, pillar frame, and inductor core, wherein a portion of the pillar frame is removed to form inductor pillars around the inductor core;

a first interconnect structure formed over a first surface of the encapsulant; and

a second interconnect structure formed over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form a 3D inductor.

22 . The semiconductor device of claim 21 , wherein removing the portion of the pillar frame leaves an interconnect pillar.

23 . The semiconductor device of claim 21 , further including a shielding layer formed over the semiconductor component.

24 . The semiconductor device of claim 21 , further including an integrated passive device formed within the first or second interconnect structures.

25 . The semiconductor device of claim 21 , further including a plurality of 3D inductors formed with the inductor pillars.