Semiconductor device and method of forming shielding layer over active surface of semiconductor die

1. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a plurality of semiconductor die;

forming a plurality of contact pads on an active surface of the semiconductor die;

forming a first insulating layer over the semiconductor wafer;

removing a portion of the first insulating layer to expose the contact pads on the semiconductor die;

forming an opening partially through the semiconductor wafer;

forming a second insulating layer in the opening in the semiconductor wafer;

forming a shielding layer over the active surface with the shielding layer extending into the opening of the semiconductor wafer to form a conductive via; and

removing a portion of a back surface of the semiconductor wafer to singulate the semiconductor die.

2. The method of claim 1 , further including electrically connecting the shielding layer through the conductive via to a ground point.

3. The method of claim 1 , further including forming a bond wire between a surface of the shielding layer and a ground point.

4. The method of claim 1 , further including:

providing a substrate; and

disposing the semiconductor die over the substrate including a conductive adhesive with the shielding layer being electrically connected through the conductive adhesive to a ground point.

5. The method of claim 1 , further including:

providing a substrate;

disposing the semiconductor die over the substrate including a die attach adhesive; and

forming a bump between the conductive via and a ground point to ground the shielding layer.

6. The method of claim 1 , further including conformally applying the second insulating layer to sidewalls of the opening in the semiconductor wafer.

7. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a plurality of semiconductor die;

forming a first insulating layer over the semiconductor wafer;

forming an opening partially through the semiconductor wafer;

forming a second insulating layer in the opening in the semiconductor wafer;

forming a shielding layer covering an active surface and side surfaces of the semiconductor die with the shielding layer extending into the opening of the semiconductor wafer to form a conductive via; and

removing a portion of a back surface of the semiconductor wafer to singulate the semiconductor die.

8. The method of claim 7 , further including forming the opening partially through the semiconductor wafer.

9. The method of claim 7 , further including removing a portion of the first insulating layer to expose contact pads on the semiconductor die.

10. The method of claim 7 , further including electrically connecting the shielding layer through the conductive via to a ground point.

11. The method of claim 7 , further including forming a bond wire between a surface of the shielding layer and a ground point.

12. The method of claim 7 , further including:

providing a substrate; and

disposing the semiconductor die over the substrate including a conductive adhesive electrically connecting the shielding layer and a ground point.

13. The method of claim 7 , further including:

providing a substrate;

disposing the semiconductor die over the substrate including a die attach adhesive; and

forming a bump between the conductive via and a ground point to ground the shielding layer.

14. A method of making a semiconductor device, comprising:

providing a semiconductor die including a contact pad on a first surface of the semiconductor die;

forming a first insulating layer over the semiconductor die;

forming an opening through the semiconductor die; and

forming a shielding layer over the first surface of the semiconductor die and a second surface of the semiconductor die adjacent to the first surface leaving the contact pad exposed, the shielding layer extending into the opening of the semiconductor die to form a conductive via.

15. The method of claim 14 , further including forming a second insulating layer in the opening in the semiconductor die.

16. The method of claim 14 , further including removing a portion of the first insulating layer to expose contact pads on the semiconductor die.

17. The method of claim 14 , further including electrically connecting the shielding layer through the conductive via to a ground point.

18. The method of claim 14 , further including forming a bond wire between a surface of the shielding layer and a ground point.

19. The method of claim 14 , further including:

providing a substrate; and

disposing the semiconductor die over the substrate including a conductive adhesive electrically connecting the shielding layer and a ground point.

20. The method of claim 14 , further including:

providing a substrate; and

disposing the semiconductor die over the substrate including a die attach adhesive; and

forming a bump between the conductive via and a ground point to ground the shielding layer.

21. A semiconductor device, comprising:

a semiconductor wafer including a plurality of semiconductor die;

a first insulating layer formed over the semiconductor wafer;

an opening formed through the semiconductor wafer;

a second insulating layer formed in the opening; and

a shielding layer formed to completely cover an active surface of the semiconductor die and extending into the opening of the semiconductor wafer to form a conductive via.

22. The semiconductor device of claim 21 , wherein a portion of a back surface of the semiconductor wafer is removed to singulate the semiconductor die.

23. The semiconductor device of claim 21 , wherein the shielding layer is electrically connected through the conductive via to a ground point.

24. The semiconductor device of claim 21 , further including a bond wire formed between a surface of the shielding layer and a ground point.

25. The semiconductor device of claim 21 , further including a substrate comprising a ground point with the semiconductor die disposed over the substrate and electrically connected to the ground point.