Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer
A semiconductor device has a substrate with a plurality of contact pads. A first insulation layer is formed over the substrate and contact pads. A portion of the first insulating layer is removed to form a toroid-shaped SRO over the contact pads while retaining a central portion of the first insulating layer over the contact pads. The central portion of the first insulating layer can extend above a surface of the first insulating layer outside the first conductive layer. A first conductive layer is formed over the central portion of the first insulating layer and through the SRO in the first insulating layer over the contact pads. The first conductive layer may extend above a surface of the first insulating layer outside the second conductive layer. A semiconductor die is mounted to the substrate with the bumps electrically connected to the first conductive layer.
1 . A method of making a semiconductor device, comprising:
providing a substrate with a plurality of first contact pads;
forming a first insulation layer over the substrate and first contact pads;
removing a portion of the first insulating layer to form a toroid-shaped opening over the first contact pads while retaining a central portion of the first insulating layer over the first contact pads;
conformally applying a first conductive layer over the central portion of the first insulating layer and through the toroid-shaped opening in the first insulating layer over the first contact pads;
providing a semiconductor die;
forming a plurality of second contact pads over an active surface of the semiconductor die;
forming a second insulating layer over the active surface of the semiconductor die;
forming a third insulating layer over the second insulating layer;
forming a second conductive layer over the second contact pads and third insulating layer;
forming bumps over the second conductive layer; and
mounting the semiconductor die to the substrate with the bumps electrically connected to the first conductive layer.
2 . The method of claim 1 , wherein the first insulating layer includes solder resist material.
3 . The method of claim 1 , further including:
forming a mask layer over the first insulating layer prior to conformally applying the first conductive layer; and
removing the mask layer after conformally applying the first conductive layer.
4 . The method of claim 1 , further including utilizing laser direct ablation to remove the portion of the first insulating layer and form the toroid-shaped opening over the first contact pads.
5 . The method of claim 1 , wherein the central portion of the first insulating layer extends above a surface of the first insulating layer outside the first conductive layer.
6 . A method of making a semiconductor device, comprising:
providing a substrate having a first conductive layer;
forming a first insulation layer over the substrate and first conductive layer;
removing a portion of the first insulating layer to form an opening over the first conductive layer while retaining a central portion of the first insulating layer over the first conductive layer;
forming a second conductive layer over the central portion of the first insulating layer and through the opening in the first insulating layer over the first conductive layer; and
mounting a semiconductor die to the substrate with bumps electrically connected to the second conductive layer.
7 . The method of claim 6 , further including:
forming a third conductive layer over an active surface of the semiconductor die;
forming a second insulating layer over the active surface of the semiconductor die;
forming a third insulating layer over the second insulating layer;
forming a fourth conductive layer over the third conductive layer and third insulating layer; and
forming the bumps over the fourth conductive layer.
8 . The method of claim 6 , wherein the first insulating layer includes solder resist material.
9 . The method of claim 6 , further including:
forming a mask layer over the first insulating layer prior to forming the first conductive layer; and
removing the mask layer after forming the first conductive layer.
10 . The method of claim 6 , further including utilizing laser direct ablation to remove the portion of the first insulating layer and form the opening over the first conductive layer.
11 . The method of claim 6 , further including conformally applying the second conductive layer over the central portion of the first insulating layer and through the opening in the first insulating layer over the first conductive layer.
12 . The method of claim 6 , wherein the central portion of the first insulating layer extends above a surface of the first insulating layer outside the first conductive layer.
13 . The method of claim 6 , wherein the second conductive layer extends above a surface of the first insulating layer outside the second conductive layer.
14 . A method of making a semiconductor device, comprising:
providing a substrate having a first conductive layer;
forming a first insulation layer over the substrate and first conductive layer;
forming an opening through the first insulating layer over the first conductive layer while retaining a portion of the first insulating layer over the first conductive layer; and
forming a second conductive layer over the retained portion of the first insulating layer and through the opening in the first insulating layer over the first conductive layer.
15 . The method of claim 14 , further including mounting a semiconductor die to the substrate with bumps electrically connected to the second conductive layer.
16 . The method of claim 15 , further including:
forming a third conductive layer over an active surface of the semiconductor die;
forming a second insulating layer over the active surface of the semiconductor die;
forming a third insulating layer over the second insulating layer;
forming a fourth conductive layer over the third conductive layer and third insulating layer; and
forming the bumps over the fourth conductive layer.
17 . The method of claim 14 , wherein the first insulating layer includes solder resist material.
18 . The method of claim 14 , further including utilizing laser direct ablation to remove the portion of the first insulating layer and form the opening over the first conductive layer.
19 . The method of claim 14 , wherein the retained portion of the first insulating layer extends above a surface of the first insulating layer outside the first conductive layer.
20 . The method of claim 14 , wherein the second conductive layer extends above a surface of the first insulating layer outside the second conductive layer.
21 . A semiconductor device, comprising:
a substrate having a first conductive layer;
a first insulation layer formed over the substrate and first conductive layer;
an opening formed through the first insulating layer over the first conductive layer while retaining a central portion of the first insulating layer over the first conductive layer;
a second conductive layer formed over the central portion of the first insulating layer and through the opening in the first insulating layer over the first conductive layer; and
a semiconductor die mounted to the substrate with bumps electrically connected to the second conductive layer.
22 . The semiconductor device of claim 21 , further including:
a third conductive layer formed over an active surface of the semiconductor die;
a second insulating layer formed over the active surface of the semiconductor die;
a third insulating layer formed over the second insulating layer;
a fourth conductive layer formed over the third conductive layer and third insulating layer; and
the bumps formed over the fourth conductive layer.
23 . The semiconductor device of claim 21 , wherein the first insulating layer includes solder resist material.
24 . The semiconductor device of claim 21 , wherein the central portion of the first insulating layer extends above a surface of the first insulating layer outside the first conductive layer.
25 . The semiconductor device of claim 21 , wherein the second conductive layer extends above a surface of the first insulating layer outside the second conductive layer.