Method to form solder deposits on substrates

1. A method of forming a solder deposit on a substrate comprising the following steps:

i) provide a substrate including a surface bearing electrical circuitry that includes at least one contact area,

ii) form a solder mask layer that is placed on the substrate surface and patterned to expose the at least one contact area,

ii a) form an additional resist layer on the solder mask layer,

iii) contact the entire substrate area including the resist and solder mask layer and the at least one contact area with a solution suitable to provide a conductive layer on the substrate surface,

iv) electroplate a solder deposit layer containing a tin or tin alloy onto the conductive layer,

v) etch away an amount of the solder deposit layer containing tin or tin alloy and the conductive layer sufficient to remove both the solder deposit layer and the conductive layer from the resist layer area leaving a solder material layer on the at least one contact area,

vi) remove the resist layer.

2. The method according to claim 1 comprising the following steps between step i) and step ii):

a) form a photo resist layer that is placed on the at least one copper surface of the substrate and structure said photo resist layer to a negative image of a circuitry,

b) etch away the portions of the at least one copper surface which are exposed through the patterned photo resist,

c) remove the photo resist.

3. The method according to claim 1 wherein at least one opening to expose at least one inner layer pad is formed.

4. The method according to claim 3 wherein the at least one opening is formed after step ii).

5. The method according to claim 3 wherein the at least one opening is formed before step ii).

6. The method according to claim 1 wherein the tin or tin alloy is deposited from a composition comprising

at least one source of tin ions

at least one acid

at least one leveling agent which is selected form the group consisting of aromatic aldehydes, aromatic ketones and α-/β-unsaturated carboxylic acids and

at least one anti-oxidant.

7. The method according to claim 6 wherein the at least one aromatic aldehyde or ketone is selected from the group consisting of benzylidene acetone, benzaldehyde, 3-chlorobenzaldehyde, 4-chlorobenzaldehyde, 2,4-dichlorobenzaldehyde, 2,6-dichlorobenzaldehyde, 2,4,6-trichlorobenzaldehyde, 1-naphthaldehyde, 2-naphthaldehyde, 2-hydroxybenzaldehyde, 3-hydroxybenzaldehyde, 4-hydroxybenzaldehyde, 2-methylbenzaldehyde, 3-methylbenzaldehyde, 4-methylbenzaldehyde, m-anisaldehyde, o-anisaldehyde, p-anisaldehyde, 2-chloroacetophenone, 3-chloroacetophenone, 4-chloroacetophenone, 2,4-dichloroacetophenone, 2,4,6-trichloroacetophenone.

8. The method according to claim 6 wherein the at least one α-/β-unsaturated carboxylic acid is selected from the group consisting of acrylic acid, methacrylic acid, crotonic acid, 3-chloroacrylic acid, 3,3-dimethylacrylic acid, 2,3-dimethylacrylic acid, methyl acrylate, ethyl acrylate, n-butyl acrylate, i-butyl acrylate, 2-ethylhexyl acrylate, ethyl methacrylate, n-butyl methacrylate, i-butyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2-dimethylaminoethyl methacrylate, methacrylic anhydride and methyl methacrylic acid.

9. The method according to claim 6 wherein a mixture of at least one aromatic aldehyde or aromatic ketone and at least one α-/β-unsaturated carboxylic acid is used as leveling agents.

10. The method according to claim 1 wherein a barrier layer is plated on the at least one contact area.

11. The method according to claim 10 wherein the barrier layer consists of a metal selected from the group consisting of copper, tin, nickel, chromium, titanium, gold, copper-chromium alloy, tin-lead alloy and any alloy thereof.

12. The method according to claim 1 wherein an additional layer of metal is deposited onto the solder deposit layer.

13. The method according to claim 12 wherein the additional layer of metal is selected from the group consisting of lead, silver, copper, bismuth, antimony, zinc, nickel, aluminum, magnesium, indium, tellurium, gold and gallium.

14. The method according to claim 1 wherein the contact area comprises a via or trench.

15. The method according to claim 1 , wherein the substrate is subjected to a reflow process to reflow the solder deposit layer containing a tin or tin alloy.

16. The method according to claim 1 wherein the conductive seed layer is formed by electroless deposition of copper.

17. The method according to claim 1 wherein the solder deposit layer is a tin alloy made by the mixture of tin and the elements selected from the group consisting of lead, silver, copper, bismuth, antimony, zinc, nickel, aluminum, magnesium, indium, tellurium, nickel and gallium.

18. The method according to claim 1 wherein the substrate is a printed circuit board, an IC substrate or an interposer.