Pattern inspection apparatus and method
A pattern inspection apparatus is used for inspecting a fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data. The pattern inspection apparatus includes a reference pattern generation device configured to generate a reference pattern represented by one or more lines, comprising one of a line segment and a curve, from the data, an image generation device configured to generate the image of the pattern to-be-inspected, a detecting device configured to detect an edge of the image of the pattern to-be-inspected, and an inspection device configured to inspect the pattern to-be-inspected by comparing the edge of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.
1. A method for inspecting a pattern to-be-inspected by using an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected, comprising the steps of:
controlling an image generation device to generate the image of the pattern to-be-inspected;
storing at least part of the image in a memory of an inspection apparatus;
storing, into the memory, at least one reference pattern representing one or both of one or more line segments and one or more curves, the at least one reference pattern derived from data for fabricating the pattern to-be inspected and comprising data associated with at least a first and a second mask;
detecting edges within the image;
determining a first shift quantity by comparing at least one detected edge associated with the first mask and an associated line or curve of the reference pattern;
determining a second shift quantity by comparing at least one detected edge associated with the second mask and an associated line or curve of the reference pattern; and
determining an overlay error by differencing the first shift quantity and the second shift quantity;
wherein the reference pattern comprises a pattern generated by at least one of (i) geometry operation between the data for fabricating the pattern to-be-inspected representing the first mask and the data for fabricating the pattern to-be-inspected representing the second mask, and (ii) geometry operation between the reference pattern associated with the first mask and the reference pattern associated with the second mask.
2. A method for inspecting a pattern to-be-inspected by using an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected, comprising the steps of:
controlling an image generation device to generate the image of the pattern to-be-inspected;
storing at least part of the image in a memory of an inspection apparatus;
storing, into the memory, at least one reference pattern representing one or both of one or more line segments and one or more curves, the at least one reference pattern derived from data for fabricating the pattern to-be inspected and comprising data associated with at least a first and a second mask;
detecting edges within the image;
determining a shift quantity by examining at least one detected edge associated with the first mask and at least one detected edge associated with the second mask;
wherein the reference pattern comprises a pattern generated by a method comprising performing a Boolean OR between data for fabricating the pattern to-be-inspected representing the first mask and data for fabricating the pattern to-be-inspected representing the second mask; and
wherein the step of determining a shift quantity is performed by determining a first shift quantity by comparing the at least one detected edge associated with said first mask and an associated line or curve of said at least one reference pattern;
determining a second shift quantity by comparing the at least one detected edge associated with said second mask and an associated line or curve of said at least one reference pattern; and
determining an overlay error by differencing said first shift quantity and said second shift quantity.
3. The method of claim 2 wherein the reference pattern generated by a method comprising performing a Boolean OR is further refined by applying corner rounding to the reference pattern such that corners formed by the Boolean OR have a smaller radius than corners formed by only one of the first and second masks.
4. The method of claim 2 wherein the at least one reference pattern comprises a first reference pattern representing a first pattern and generated from fabrication data associated with the first mask, said first reference pattern representing one or both of (i) one or more line segments, and (ii) one or more curves; and
a second reference pattern representing a second pattern and generated from fabrication data associated with the second mask, said second reference pattern representing one or both of (i) one or more line segments, and (ii) one or more curves; and
wherein the step of determining a shift quantity is performed by determining a first shift quantity by comparing the at least one detected edge associated with said first mask and an associated line or curve of said at least one reference pattern;
determining a second shift quantity by comparing the at least one detected edge associated with said second mask and an associated line or curve of said at least one reference pattern; and
determining an overlay error by differencing said first shift quantity and said second shift quantity.
5. A pattern inspection apparatus for inspecting a pattern to-be-inspected by using an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected, the pattern inspection apparatus comprising:
an image generation device configured to generate the image of the pattern to-be-inspected; and
a memory storing a plurality of machine readable instructions that when executed perform the steps of:
storing, into the memory, a reference pattern generated by performing a Boolean OR between a first mask and a second mask, the reference pattern representing one or both of (i) one or more line segments, and (ii) one or more curves;
applying corner rounding to the reference pattern such that corners formed by the Boolean OR have a smaller radius than corners formed by only one of the first and second masks;
storing at least part of the image into the memory;
detecting edges within the image;
determining a first shift quantity by comparing at least one detected edge associated with the first mask and an associated line or curve of the reference pattern;
determining a second shift quantity by comparing at least one detected edge associated with the second mask and an associated line or curve of the reference pattern; and
determining an overlay error by differencing the first shift quantity and the second shift quantity.
6. A method for inspecting a pattern to-be-inspected by using an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected, comprising the steps of:
controlling an image generation device to generate the image of the pattern to-be-inspected;
storing at least part of the image in a memory of an inspection apparatus;
storing, into the memory, a reference pattern generated by performing a Boolean OR between data for fabricating the pattern to-be-inspected representing a first mask layer and data for fabricating the pattern to-be-inspected representing a second mask layer, the reference pattern representing one or both of (i) one or more line segments, and (ii) one or more curves;
applying corner rounding to the reference pattern such that corners formed by the Boolean OR have a smaller radius than corners formed by only one of the first and second masks;
detecting edges within the image;
determining a first shift quantity by comparing at least one detected edge associated with the first mask and an associated line or curve of the reference pattern;
determining a second shift quantity by comparing at least one detected edge associated with the second mask and an associated line or curve of the reference pattern; and
determining an overlay error by differencing the first shift quantity and the second shift quantity.
7. A pattern inspection apparatus for inspecting a pattern to-be-inspected by using an image of said pattern to-be-inspected and data for fabricating said pattern to-be-inspected, said pattern inspection apparatus comprising:
an image generation device configured to generate an image of a pattern to-be-inspected;
a memory storing a plurality of machine readable instructions that when executed perform the steps of:
controlling the image generation device to generate the image of the pattern to-be-inspected;
storing at least part of the image in the memory;
storing, into the memory, at least one reference pattern representing one or both of one or more line segments and one or more curves, the at least one reference pattern derived from data for fabricating the pattern to-be inspected and comprising data associated with at least a first and a second mask;
detecting edges within the image; and
determining a first shift quantity by comparing at least one detected edge associated with the first mask and an associated line or curve of the reference pattern;
determining a second shift quantity by comparing at least one detected edge associated with the second mask and an associated line or curve of the reference pattern; and
determining an overlay error by differencing the first shift quantity and the second shift quantity;
wherein the reference pattern comprises a pattern generated by at least one of (i) geometry operation between the data for fabricating the pattern to-be-inspected representing the first mask and the data for fabricating the pattern to-be-inspected representing the second mask, and (ii) geometry operation between the reference pattern associated with the first mask and the reference pattern associated with the second mask.
8. A pattern inspection apparatus for inspecting a pattern to-be-inspected by using an image of said pattern to-be-inspected and data for fabricating said pattern to-be-inspected, said pattern inspection apparatus comprising:
an image generation device configured to generate an image of a pattern to-be-inspected;
a memory storing a plurality of machine readable instructions that when executed perform the steps of:
controlling the image generation device to generate the image of the pattern to-be-inspected;
storing at least part of the image in the memory;
storing, into the memory, at least one reference pattern representing one or both of one or more line segments and one or more curves, the at least one reference pattern derived from data for fabricating the pattern to-be inspected and comprising data associated with at least a first and a second mask;
detecting edges within the image; and
determining a shift quantity by examining at least one detected edge associated with the first mask and at least one detected edge associated with the second mask;
wherein the reference pattern comprises a pattern generated by a method comprising performing a Boolean OR between data for fabricating the pattern to-be-inspected representing the first mask and data for fabricating the pattern to-be-inspected representing the second mask; and
wherein the instructions for perform the step of determining a shift quantity perform:
determining a first shift quantity by comparing the at least one detected edge associated with said first mask and an associated line or curve of said at least one reference pattern,
determining a second shift quantity by comparing the at least one detected edge associated with said second mask and an associated line or curve of said at least one reference pattern, and
determining an overlay error by differencing said first shift quantity and said second shift quantity.
9. The apparatus of claim 8 , wherein the reference pattern is generated by a method comprising performing a Boolean OR is further refined by applying corner rounding to the reference pattern such that corners formed by the Boolean OR have a smaller radius than corners formed by only one of the first and second masks.
10. The apparatus of claim 8 ,
wherein the at least one reference pattern comprises:
a first reference pattern representing a first pattern and generated from fabrication data associated with the first mask, said first reference pattern representing one or both of (i) one or more line segments, and (ii) one or more curves; and
a second reference pattern representing a second pattern and generated from fabrication data associated with the second mask, said second reference pattern representing one or both of (i) one or more line segments, and (ii) one or more curves; and
wherein the step of determining a shift quantity is performed by determining a first shift quantity by:
comparing the at least one detected edge associated with said first mask and an associated line or curve of said at least one reference pattern;
determining a second shift quantity by comparing the at least one detected edge associated with said second mask and an associated line or curve of said at least one reference pattern; and
determining an overlay error by differencing said first shift quantity and said second shift quantity.
11. The method of claim 1 wherein the geometry operation comprises at least one of (i) Boolean OR operation and (ii) corner rounding.
12. The method of claim 11 wherein a radius of the corner rounding differs between corners formed by the Boolean OR operation and corners formed by only one of the first and second masks.
13. The apparatus of claim 7 wherein the geometry operation comprises at least one of (i) Boolean OR operation and (ii) corner rounding.
14. The apparatus of claim 13 wherein a radius of the corner rounding differs between corners formed by the Boolean OR operation and corners formed by only one of the first and second masks.