Method for forming metal oxides and silicides in a memory device
View Patent ↗Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process.
1. A method for fabricating a resistive switching memory device, comprising:
depositing a metallic layer on a lower electrode disposed on a substrate, wherein the lower electrode comprises a silicon material and the metallic layer comprises a metal selected from the group consisting of hafnium, zirconium, alloys thereof, and combinations thereof;
forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process which comprises:
heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C.; and
exposing the metallic layer to an activated oxygen source; and subsequently
forming a metal silicide layer from a lower portion of the metallic layer by heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. during a silicidation process.
2. The method of claim 1 , wherein the metallic layer further comprises aluminum, and the metallic layer has an aluminum concentration within a range from about 5 at % to about 15 at %.
3. The method of claim 2 , wherein the metal of the metallic layer is hafnium.
4. The method of claim 1 , wherein the metallic layer further comprises at least one dopant element selected from the group consisting of yttrium, scandium, and gadolinium.
5. The method of claim 4 , wherein the dopant element is deposited by a sputtering process.
6. The method of claim 1 , wherein the dopant element is fluorine contained within the silicon material of the lower electrode, and the silicon material has a fluorine concentration within a range from about 0.5 at % to about 5 at %.
7. The method of claim 6 , wherein the dopant element is implanted into the silicon material by an ion implantation process.
8. The method of claim 1 , wherein the metallic layer has a thickness within a range from about 20 Å to about 50 Å, the metal oxide layer has a thickness within a range from about 30 Å to about 50 Å, and the metal silicide layer has a thickness within a range from about 10 Å to about 20 Å.
9. The method of claim 1 , wherein the metallic layer is deposited by a process selected from the group consisting of physical vapor deposition, chemical vapor deposition, atomic layer deposition, laser ablation, and electroless deposition.
10. The method of claim 9 , wherein the metallic layer is deposited by a physical vapor deposition process and a hafnium target doped with aluminum is sputtered during the physical vapor deposition process while depositing the metallic layer.
11. The method of claim 1 , wherein the activated oxygen source comprises or is formed from at least one oxygen source selected from the group consisting of oxygen (O 2 ), atomic oxygen (O), ozone, nitrous oxide, nitric oxide, nitrogen dioxide, dinitrogen pentoxide, derivatives thereof, plasmas thereof, and combinations thereof.
12. The method of claim 11 , wherein the activated oxygen source comprises atomic oxygen or ozone.
13. The method of claim 1 , wherein the oxidizing temperature is within a range from about 400° C. to about 500° C. during the oxidation process.
14. The method of claim 13 , wherein the oxidizing temperature is maintained for a time period within a range from about 1 minute to about 5 minutes during the oxidation process.
15. The method of claim 1 , wherein the substrate is exposed to an annealing gas selected from the group consisting of argon, nitrogen, helium, air, mixtures thereof, and combinations thereof during the silicidation process.
16. The method of claim 1 , wherein the annealing temperature is within a range from about 625° C. to about 800° C. during the silicidation process and the annealing temperature is maintained for a time period within a range from about 30 seconds to about 90 seconds during the silicidation process.
17. The method of claim 1 , wherein the silicon material of the lower electrode comprises n-type, polysilicon.
18. The method of claim 1 , further comprising forming an upper electrode over the metal oxide layer subsequent to the silicidation process, wherein the upper electrode comprises titanium nitride or alloys thereof.
19. A method for fabricating a resistive switching memory device, comprising:
depositing a metallic layer on a lower electrode disposed on a substrate, wherein the lower electrode comprises a silicon material and the metallic layer comprises a metal selected from the group consisting of hafnium, zirconium, alloys thereof, and combinations thereof;
forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process which comprises:
heating the substrate to an oxidizing temperature within a range from about 10° C. to about 100° C.; and
exposing the metallic layer to ozone activated by an ultraviolet source; and subsequently
forming a metal silicide layer from a lower portion of the metallic layer by heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. during a silicidation process.
20. The method of claim 19 , wherein the oxidizing temperature within a range from about 15° C. to about 30° C.