Patent Assignment
Reel/Frame 040381/0032
Assignment of Assignor's Interest
Recorded: 2016-10-17
Pages: 8
Assignor
SANDISK 3D LLC
Executed: 2016-09-23
Assignee
SANDISK TECHNOLOGIES LLC
6900 DALLAS PARKWAY, SUITE 325, PLANO, TEXAS, 75024
Covered Properties
(59)
Method for Forming Metal Oxides and Silicides in a Memory Device
Atomic Layer Deposition of Metal Oxides for Memory Applications
Defect Gradient to Boost Nonvolatile Memory Performance
Interface Layer Improvements for Nonvolatile Memory Applications
Application:
13/228,744 →
Publication:
US 2013/0065377
Atomic Layer Deposition of Zirconium Oxide for Forming Resistive-Switching Materials
Nonvolatile Resistive Memory Element with a Passivated Switching Layer
Nonvolatile Resistive Memory Element with a Metal Nitride Containing Switching Layer
Nonvolatile Memory Device Using a Tunnel Oxide as a Current Limiter Element
Multifunctional Electrode
Transition Metal Oxide Bilayers
Nonvolatile Memory Device Using A Tunnel Nitride As A Current Limiter Element
ReRAM STACKS PREPARATION BY USING SINGLE ALD OR PVD CHAMBER
Current-Limiting Layer and a Current-Reducing Layer in a Memory Device
Nonvolatile Memory Device Using a Tunnel Oxide Layer and Oxygen Blocking Layer as a Current Limiter Element
Nonvolatile Memory Device Using a Varistor as a Current Limiter Element
Method of Forming Anneal-Resistant Embedded Resistor for Non-Volatile Memory Application
IL-Free MIM stack for clean RRAM Devices
Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer
Multi-Level Memory Array Having Resistive Elements For Multi-Bit Data Storage
Memory Cell Having an Integrated Two-Terminal Current Limiting Resistor
Resistive Switching Layers Including Hf-Al-O
Limited Maximum Fields of Electrode-Switching Layer Interfaces in Re-RAM Cells
Forming Nonvolatile Memory Elements By Diffusing Oxygen Into Electrodes
Sequential Atomic Layer Deposition of Electrodes and Resistive Switching Components
Carbon Doped Resistive Switching Layers
Resistive Random Access Memory Access Cells Having Thermally Isolating Structures
Radiation Enhanced Resistive Switching Layers
Resistive Random Access Memory Cells Having Metal Alloy Current Limiting Layers
Morphology control of ultra-thin MeOx layer
Resistive Random Access Memory Cell Having Three or More Resistive States
Method for Forming Metal Oxides and Silicides in a Memory Device
Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells
Confined Defect Profiling Within Resistive Random Memory Access Cells
Transition Metal Oxide Bilayers
Nonvolatile Memory Device Using a Tunnel Nitride as a Current Limiter Element
Multifunctional Electrode
Defect Gradient to Boost Nonvolatile Memory Performance
Nonvolatile Resistive Memory Element with a Passivated Switching Layer
Application:
14/133,107 →
Publication:
US 2014/0103280
Nonvolatile Memory Device Using a Varistor as a Current Limiter Element
Nonvolatile Memory Device Using a Tunnel Oxide as a Passive Current Steering Element
Transition Metal Oxide Bilayers
Multifunctional Electrode
Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers
Sequential Atomic Layer Deposition of Electrodes and Resistive Switching Components
Current-Limiting Layer and a Current-Reducing Layer in a Memory Device
Application:
14/458,295 →
Publication:
US 2014/0353567
Atomic Layer Deposition of Metal Oxides for Memory Applications
Method of Forming Anneal-Resistant Embedded Resistor for Non-Volatile Memory Application
Multifunctional Electrode
Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells
Morphology Control of Ultra-Thin Meox Layer
Atomic Layer Deposition of Metal Oxide Materials for Memory Applications
Confined Defect Profiling within Resistive Random Memory Access Cells
Method of forming anneal-resistant embedded resistor for non-volatile memory application
Method for Forming Metal Oxides and Silicides in a Memory Device
Transition Metal Oxide Bilayers
Morphology Control of Ultra-Thin Meox Layer
Atomic Layer Deposition of Metal Oxides for Memory Applications
Multi-Level Memory Array Having Resistive Elements for Multi-Bit Data Storage
Resistive Random Access Memory Cell Having Three or More Resistive States
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 22, 2011
From: PRAMANIK, DIPANKAR; CHIANG, TONY
To: INTERMOLECULAR, INC.
Reel/Frame 026638/0321 →
Assignment of Assignor's Interest
Aug 5, 2011
From: HONG, ZHENDONG; PHAM, HIEU; HIGUCHI, RANDALL; GOPAL, VIDYUT
To: INTERMOLECULAR, INC.
Reel/Frame 026707/0057 →
Assignment of Assignor's Interest
Sep 1, 2011
From: WANG, YUN; CHIANG, TONY; HASHIM, IMRAN
To: INTERMOLECULAR, INC.
Reel/Frame 026846/0535 →
Assignment of Assignor's Interest
Sep 9, 2011
From: GOPAL, VIDYUT; WANG, YUN; HASHIM, IMRAN
To: INTERMOLECULAR, INC.
Reel/Frame 026879/0711 →
Assignment of Assignor's Interest
Nov 29, 2011
From: TONG, JINHONG; GOPAL, VIDYUT; HASHIM, IMRAN; HIGUCHI, RANDALL
To: INTERMOLECULAR, INC.
Reel/Frame 027290/0757 →
Assignment of Assignor's Interest
Dec 3, 2011
From: CHEN, CHARLENE; PRAMANIK, DIPANKAR
To: INTERMOLECULAR, INC.
Reel/Frame 027324/0264 →
Assignment of Assignor's Interest
Jan 25, 2012
From: WANG, YUN; CHIANG, TONY P.; HASHIM, IMRAN
To: INTERMOLECULAR, INC.
Reel/Frame 027594/0639 →
Assignment of Assignor's Interest
Feb 7, 2012
From: TENDULKAR, MIHIR; WANG, YUN
To: INTERMOLECULAR, INC.
Reel/Frame 027667/0364 →
Assignment of Assignor's Interest
Feb 7, 2012
From: PHAM, HIEU; GOPAL, VIDYUT; HASHIM, IMRAN; PRAMANIK, DIPANKAR
To: INTERMOLECULAR, INC.
Reel/Frame 027664/0625 →
Assignment of Assignor's Interest
Feb 7, 2012
From: PHAM, HIEU; GOPAL, VIDYUT; HASHIM, IMRAN; WANG, YUN
To: INTERMOLECULAR, INC.
Reel/Frame 027668/0497 →
Assignment of Assignor's Interest
Feb 8, 2012
From: TENDULKAR, MIHIR; HASHIM, IMRAN; WANG, YUN
To: INTERMOLECULAR, INC.
Reel/Frame 027674/0295 →
Assignment of Assignor's Interest
Feb 15, 2012
From: LEE, ALBERT; HSUEH, CHIEN-LAN
To: INTERMOLECULAR, INC.
Reel/Frame 027711/0319 →
Assignment of Assignor's Interest
Feb 17, 2012
From: WANG, YUN; CHIANG, TONY P.; HASHIM, IMRAN
To: INTERMOLECULAR, INC.
Reel/Frame 027728/0499 →
Assignment of Assignor's Interest
Feb 17, 2012
From: TENDULKAR, MIHIR; HASHIM, IMRAN; WANG, YUN
To: INTERMOLECULAR, INC.
Reel/Frame 027726/0098 →
Assignment of Assignor's Interest
Feb 17, 2012
From: TENDULKAR, MIHIR; HASHIM, IMRAN; WANG, YUN
To: INTERMOLECULAR, INC.
Reel/Frame 027726/0471 →
Assignment of Assignor's Interest
Dec 3, 2012
From: TENDULKAR, MIHIR; CHI, DAVID
To: INTERMOLECULAR, INC.; KABUSHIKI KAISHA TOSHIBA; SANDISK 3D LLC
Reel/Frame 029395/0246 →
Assignment of Assignor's Interest
Dec 13, 2012
From: NARDI, FEDERICO; WANG, YUN
To: INTERMOLECULAR, INC.; KABUSHIKI KAISHA TOSHIBA; SANDISK 3D LLC
Reel/Frame 029466/0041 →
Assignment of Assignor's Interest
Apr 17, 2013
From: PRAMANIK, DIPANKAR; CHIANG, TONY; MINVIELLE, TIM; YAMAGUCHI, TAKESHI
To: INTERMOLECULAR, INC.; KABUSHIKI KAISHA TOSHIBA; SANDISK 3D LLC
Reel/Frame 030236/0903 →
Assignment of Assignor's Interest
Jun 14, 2013
From: INTERMOLECULAR, INC.
To: SANDISK 3D LLC; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030615/0576 →
Assignment of Assignor's Interest
Jun 14, 2013
From: INTERMOLECULAR, INC.
To: SANDISK 3D LLC; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030611/0679 →
Assignment of Assignor's Interest
Jun 14, 2013
From: INTERMOLECULAR, INC.
To: SANDISK 3D LLC; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030614/0208 →
Assignment of Assignor's Interest
Jun 14, 2013
From: INTERMOLECULAR, INC.
To: SANDISK 3D LLC; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030614/0546 →
Assignment of Assignor's Interest
Jun 14, 2013
From: INTERMOLECULAR, INC.
To: SANDISK 3D LLC; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030614/0625 →
Assignment of Assignor's Interest
Jun 14, 2013
From: INTERMOLECULAR, INC.
To: SANDISK 3D LLC; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030614/0753 →
Assignment of Assignor's Interest
Aug 9, 2013
From: TENDULKAR, MIHIR; WANG, YUN; MINVIELLE, TIM; YAMAGUCHI, TAKESHI
To: INTERMOLECULAR, INC.; KABUSHIKI KAISHA TOSHIBA; SANDISK 3D LLC
Reel/Frame 030994/0502 →