Morphology control of ultra-thin MeOx layer
View Patent ↗A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.
1. A device comprising:
a first layer operable as a first electrode;
a second layer disposed over the first layer,
wherein the second layer comprises one of hafnium oxynitride, zirconium oxynitride, aluminum oxynitride, tantalum oxynitride, hafnium nitride, zirconium nitride, silicon nitride, aluminum nitride, titanium nitride, vanadium nitride, niobium nitride, or tungsten nitride,
wherein the second layer directly interfaces the first layer,
wherein a morphology of the first layer is the same as a morphology of at least a portion of the second layer directly interfacing the first layer, and
wherein the morphology of the first layer is one of crystalline, polycrystalline, amorphous, or a combination thereof; and
a third layer operable as a second electrode,
wherein the second layer is disposed between the first layer and the third layer.
2. The device of claim 1 , wherein the second layer comprises a metal oxide.
3. The device of claim 1 , wherein the second layer comprises a metal oxide of at least one of aluminum, hafnium, zirconium, titanium, tantalum, nickel, copper, tungsten, iron, vanadium, niobium, or tungsten.
4. The device of claim 1 , wherein the second layer comprises one of aluminum oxide, hafnium oxide, or titanium oxide.
5. The device of claim 1 , wherein the second layer comprises one of a metal oxide, a two-metal oxide, a metal nitride, a metal oxynitride, or a two-metal oxynitride.
6. The device of claim 1 , wherein the second layer comprises one of a phase change chalcogenide, a perovskite, a solid-state electrolyte, or an organic compound.
7. The device of claim 1 , wherein the second layer has a thickness of less than 5 nanometers.
8. The device of claim 1 , wherein the second layer has a thickness of between about 2 nanometers and 3 nanometers.
9. The device of claim 1 , wherein the morphology of the first layer is crystalline.
10. The device of claim 9 , wherein the first layer comprises a doped polysilicon.
11. The device of claim 1 , wherein the morphology of the first layer is polycrystalline.
12. The device of claim 11 , wherein the first layer comprises titanium nitride.
13. The device of claim 1 , wherein the morphology of the first layer is a combination of a crystalline morphology and an amorphous morphology.
14. The device of claim 1 , wherein the morphology of the second layer is substantially the same throughout a thickness of the second layer.
15. The device of claim 1 , wherein the second layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer directly interfaces the first layer, and wherein a morphology of the first sub-layer is different from morphology of the first layer.
16. The device of claim 15 , wherein composition of the first sub-layer is different from composition of the second sub-layer.
17. The device of claim 15 , wherein the first sub-layer has polycrystalline morphology, and wherein the second sub-layer has crystalline morphology.
18. The device of claim 15 , wherein a thickness of the first sub-layer is less than a thickness of the second sub-layer.