Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells
View Patent ↗Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., Ta X (Dopant) Y N, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.
1. A resistive random access memory cell comprising:
a first layer comprising a doped tantalum nitride having a first work function (WF),
wherein the doped tantalum nitride comprises a dopant,
the dopant being one of lanthanum, erbium, yttrium, or terbium;
a second layer comprising a resistive switching material having an electron affinity (X) and a dielectric permittivity (∈ s ), wherein the resistive switching comprises niobium oxide; and
a first interface formed between the first layer and the second layer.
2. The resistive random access memory cell of claim 1 , wherein the doped tantalum nitride is represented by a general formula of Ta X (Dopant) Y N, where X is at least about 0.95, and wherein Y is greater than 0.
3. The resistive random access memory cell of claim 1 , wherein the first work function of the doped tantalum nitride is less than 4.5 eV.
4. The resistive random access memory cell of claim 1 , wherein the dielectric permittivity of the resistive switching material is at least 30 and less than 100.
5. The resistive random access memory cell of claim 1 , wherein the electron affinity of the resistive switching material is at least 3.5 eV and less than 10 eV.
6. The resistive random access memory cell of claim 1 , further comprising:
a third layer comprising an electrode material having a second work function; and
a second interface formed by the second layer and the third layer,
wherein a second maximum field of the second interface has a value of less than 0.25.
7. The resistive random access memory cell of claim 6 , wherein the electrode material of the third layer comprises one of n-doped poly-silicon, titanium nitride, or tantalum nitride.
8. The resistive random access memory cell of claim 6 , wherein the electrode material of the third layer is the doped tantalum nitride.
9. The resistive random access memory cell of claim 6 , wherein the electrode material of the third layer is different from the doped tantalum nitride.
10. The resistive random access memory cell of claim 9 , wherein the work function of the doped tantalum nitride is between 4.2 and 4.4 eV.
11. The resistive random access memory cell of claim 10 , wherein the resistive switching material comprises niobium oxide.
12. The resistive random access memory cell of claim 1 , wherein the first layer has a thickness of between 5 Angstroms and 1,000 Angstroms.
13. The resistive random access memory cell of claim 1 , wherein the second layer has a thickness of between 10 Angstroms and 100 Angstroms.
14. A resistive random access memory cell comprising:
a first layer comprising a doped tantalum nitride,
wherein the doped tantalum nitride comprises a dopant,
the dopant being one of lanthanum, erbium, yttrium, or terbium; and
a second layer comprising a resistive switching material selected from one of niobium oxide, lanthanum oxide, or lanthanum aluminum oxide,
the second layer forming a first interface with the first layer.
15. The resistive random access memory cell of claim 14 , further comprising:
a third layer operable as an electrode and comprising one of n-doped poly-silicon, titanium nitride, tantalum nitride, or aluminum, the second layer forming a second interface with the third layer.
16. The resistive random access memory cell of claim 15 , wherein the resistive switching material comprises niobium oxide, and wherein the third layer comprises titanium nitride.
17. The resistive random access memory cell of claim 14 , wherein a first interface formed between the first layer and the second layer has a value of a maximum field of less than 0.25, where WF is a work function of the doped tantalum nitride, X is an electron affinity of the resistive switching materials, and E s is a relative dielectric permittivity of the resistive switching material.
18. The resistive random access memory cell of claim 1 , wherein the dopant of the doped tantalum nitride is erbium.
19. The resistive random access memory cell of claim 1 , wherein the doped tantalum nitride is Ta 0.95 Er 0.05 N y .