Multifunctional electrode
View Patent ↗A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
1. A method, comprising:
forming a first layer by reactive sputtering in an atmosphere containing a source of nitrogen;
wherein process conditions during the reactive sputtering comprises one of
a pressure between about 10 and 50 mTorr,
a substrate bias more than 120% of a value expected to minimize resistivity, or
a sputtering angle between about 55 and 85 degrees; and
wherein the first layer comprises a sub-stoichiometric metal nitride or a sub-stoichiometric metal oxynitride having a resistivity between about 0.1 and 10 ohm-cm.
2. The method of claim 1 , wherein the first layer is operable as one of a source of oxygen vacancies or a sink of oxygen vacancies.
3. The method of claim 1 , wherein the first layer is operable as a source of oxygen vacancies or alternatively as a sink of oxygen vacancies, depending on the nature of an electric field applied to the first layer.
4. The method of claim 1 , wherein the atmosphere comprises more than about 50 vol % nitrogen.
5. The method of claim 1 , wherein the atmosphere further comprises a source of oxygen.
6. The method of claim 1 , wherein a metal of the sub-stoichiometric metal nitride or the sub-stoichiometric metal oxynitride is a transition metal.
7. The method of claim 6 , wherein the transition metal comprises one of hafnium, tantalum, zirconium, lanthanum, niobium, or tungsten.
8. The method of claim 1 , wherein the first layer comprises two elements selected from the group consisting of tantalum, niobium, hafnium, yttrium, zirconium, lanthanum, vanadium, titanium, tungsten, nickel, and aluminum.
9. The method of claim 1 , wherein the first layer comprises a mixture of nitrides of different stoichiometries.
10. The method of claim 1 , wherein the first layer comprises a mixture of nitrides of different crystalline structures.
11. The method of claim 1 , wherein the first layer comprises at least one of a cubic crystalline structure, a tetragonal crystalline structure, or a hexagonal crystalline structure.
12. The method of claim 1 , wherein the first layer comprises at least one of b-TaN 0.05 , g-Ta 2 N, d-TaN, e-TaN, Ta 5 N 6 , Ta 4 N 5 , or Ta 3 N 5 .
13. The method of claim 1 , wherein a chamber pressure during the reactive sputtering is about 5 mTorr;
the atmosphere comprises between about 10 and 16 vol % nitrogen; and
the first layer comprises at least one of HfN or Hf 3 N 4 .
14. The method of claim 1 , wherein the process conditions during the reactive sputtering comprise both the substrate bias more than 120% of the value expected to minimize resistivity and the pressure between about 10 and 50 mTorr.
15. The method of claim 1 , wherein the process conditions during the reactive sputtering comprise both the substrate bias more than 120% of the value expected to minimize resistivity and the sputtering angle between about 55 and 85 degrees.
16. The method of claim 1 , further comprising:
forming a second layer over the first layer; and
forming a third layer over the second layer by reactive sputtering in an atmosphere containing a source of nitrogen;
wherein a process condition during the reactive sputtering comprises one of
a pressure between about 10 and 50 mTorr,
a substrate bias more than 120% of a value corresponding to minimum resistivity, or
a sputtering angle between about 55 and 85 degrees; and
wherein the third layer comprises a sub-stoichiometric metal nitride or a sub-stoichiometric metal oxynitride having a resistivity between about 0.1 and 10 ohm-cm.
17. The method of claim 16 , wherein the second layer is in contact with at least one of the first layer or the third layer.
18. The method of claim 16 , wherein the second layer donates oxygen vacancies to, or receives oxygen vacancies from, at least one of the second layer or the third layer under an applied electric field.
19. The method of claim 16 , wherein the second layer is near-stoichiometric.
20. The method of claim 16 , wherein the second layer has bistable resistance.