High efficiency LEDs
View Patent ↗A light emitting device and method of fabricating the same is disclosed that comprises at least one light emitter comprising an active region which emits light. The device further comprising a submount arranged such that the at least one light emitter is mounted to the submount such that the active region is angled in relation to the submount.
1. A light emitting device, comprising:
at least one light emitter comprising an active region which emits light; and
a submount arranged such that said at least one light emitter is mounted to said submount such that said active region is angled in relation to said submount, wherein a mounting surface of said light emitter is angled in relation to a plane of said active region.
2. The light emitting device of claim 1 , wherein said light emitter is comprised of a LED.
3. The light emitting device of claim 2 further wherein said LED comprises an at least an n-type semiconductor layer, a p-type semiconductor layer, and a substrate, such that said active region is formed at the interface of said n-type semiconductor layer and said p-type semiconductor layer.
4. The light emitting device of claim 1 wherein the primary emission surfaces of said light emitter are parallel to said active region.
5. The light emitting device of claim 3 , wherein at least a portion of said substrate is patterned.
6. The light emitting device of claim 1 , wherein at least a portion of said light emitter comprises light extraction features.
7. The light emitting device of claim 6 , wherein said light extraction features comprise texturing.
8. The light emitting device of claim 6 , wherein said light extraction features comprise shaping.
9. The light emitting device of claim 1 , wherein a surface of said light emitter which is adjacent to said submount has a surface area equal to or smaller than the surface area of each of the remaining surfaces of said light emitter.
10. The light emitting device of claim 1 , wherein a surface of said light emitter which is adjacent to said submount is angled such that it does not form a right angle in relation to at least one of the adjacent surfaces of said light emitter.
11. The light emitting device of claim 4 , wherein a surface of said light emitter which is adjacent to said submount has a smaller surface area than each of said primary emission surfaces.
12. The light emitting device of claim 1 , wherein said light emitter is mounted to said submount wire bond free.
13. The light emitting device of claim 1 , wherein at least a portion of said submount is reflective.
14. The light emitting device of claim 1 , wherein a surface of said light emitter which is adjacent to said submount at least in part comprises a reflective material arranged such that it reflects light emitted from said light emitter.
15. The light emitting device of claim 3 , wherein at least a portion of said substrate is transparent.
16. The light emitting device of claim 3 , wherein at least a portion of said substrate is comprised of an electrically conductive material.
17. The light emitting device of claim 3 , wherein said substrate is a growth substrate.
18. The light emitting device of claim 1 further comprising a phosphor layer disposed on at least the light emission surfaces of said light emitter.
19. The light emitting device of claim 3 , wherein the primary emission surface is a surface of said LED closest to said substrate.
20. The light emitting device of claim 3 , wherein the primary emission surface is a surface of said LED closest to said n-type semiconductor layer.
21. The light emitting device of claim 3 , wherein the primary emission surface is a surface of said LED closest to said p-type semiconductor layer.
22. The light emitting device of claim 1 , emitting a white light from said light emitting device.
23. The light emitting device of claim 1 , emitting down converted light from said light emitter.
24. The light emitting device of claim 3 , wherein said n-type semiconductor layer, p-type semiconductor layer, and said active region comprise materials from the Group-III Nitrides.
25. The light emitting device of claim 2 , wherein said at least one LED is comprised of a plurality of interconnected sub-LEDs.
26. The light emitting device of claim 25 , wherein said interconnected sub-LEDs are serially connected.
27. The light emitting device of claim 25 , wherein said interconnected sub-LEDs are connected in parallel.
28. The light emitting device of claim 1 further comprising an encapsulant.
29. The light emitting device of claim 28 , wherein said encapsulant comprises a phosphor region.
30. The light emitting device of claim 28 , wherein said encapsulant comprises light scattering particles.
31. The light emitting device of claim 1 , wherein said light emitter emits light in a Lambertian pattern.
32. The light emitting device of claim 3 , wherein said n-type and p-type semiconductor layers are comprised of Group III nitride material.
33. The light emitting device of claim 6 , wherein said light extraction features comprise reflective material.
34. The light emitting device of claim 1 , wherein said light emitter is electrically connected via wire bonds.
35. The light emitting device of claim 34 , wherein said wire bonds are connected to a side surface of said light emitter.
36. The light emitting device of claim 1 , wherein said submount is comprised of a thermally conductive material.
37. A LED package, comprising:
a LED comprising a first semiconductor material, a second semiconductor material, a substrate, and an active region formed in between said first and second semiconductor materials;
a submount, wherein said LED is mounted on said submount such that the mounting surface of said LED has a surface area equal to or smaller than any one of the remaining surfaces of said LED; and
an encapsulant disposed over said LED.
38. The LED package of claim 37 , wherein the primary emission surfaces of said LED are parallel to said active region.
39. The LED package of claim 38 , wherein said primary emission surfaces of said LED are angled in relation to said submount.
40. The LED package of claim 37 , wherein at least a portion of said LED comprises light extraction features.
41. The LED package of claim 40 , wherein said light extraction features comprise texturing.
42. The LED package of claim 40 , wherein said light extraction features comprise shaping.
43. The LED package of claim 37 , wherein said mounting surface is angled such that it does not form a right angle in relation to at least one of the adjacent surfaces of said light emitter.
44. The LED package of claim 38 , wherein said mounting surface has a smaller surface area than each of said primary emission surfaces.
45. The LED package of claim 37 , wherein said LED is mounted to said submount without wire bonds.
46. The LED package of claim 37 , wherein at least a portion of said submount is reflective.
47. The LED package of claim 37 , wherein said LED is electrically connected by wire bonds.
48. The LED package of claim 37 , wherein said mounting surface at least in part comprises a reflective material arranged such that it reflects light emitted from said light emitter.
49. The LED package of claim 37 , wherein said substrate is transparent.
50. The LED package of claim 37 , wherein said substrate is comprised of an electrically conductive material.
51. The LED package of claim 37 , wherein said substrate is comprised of a thermally conductive material.
52. The LED package of claim 37 , wherein said substrate is a growth substrate.
53. The LED package of claim 37 , further comprising a phosphor layer disposed on at least the light emission surfaces of said LED.
54. The LED package of claim 37 , wherein a primary emission surface is a substrate.
55. The LED package of claim 37 , wherein a primary emission surface is on the side of said first semiconductor layer.
56. The LED package of claim 37 , wherein a primary emission surface is on the side of said second semiconductor layer.
57. The LED package of claim 37 , wherein said LED is comprised of a plurality of interconnected sub-LEDs.
58. The LED package of claim 57 , wherein said interconnected sub-LEDs are serially connected.
59. The LED package of claim 57 , wherein said interconnected sub-LEDs are connected in parallel.
60. The LED package of claim 37 , wherein said encapsulant further comprises a phosphor region.
61. The LED package of claim 37 , wherein said encapsulant further comprises light scattering particles.
62. The LED package of claim 37 , wherein said LED emits light in a Lambertian pattern.
63. The LED package of claim 37 , wherein said first and second semiconductor materials are comprised of a Group III Nitride material.
64. A LED package, comprising:
a LED;
a submount, wherein said LED is mounted on said submount such that the mounting surface of said LED is along the minor axis of said LED; and
an encapsulant over said LED.
65. The LED package of claim 64 , wherein the primary emission surfaces of said LED are parallel to a major axis of said LED.
66. The LED package of claim 65 , wherein said primary emission surfaces of said LED are angled in relation to said submount.
67. The LED package of claim 64 , wherein at least a portion of said LED comprises light extraction features.
68. The LED package of claim 67 , wherein said light extraction features comprise texturing.
69. The LED package of claim 67 , wherein said light extraction features comprise shaping.
70. The LED package of claim 64 , wherein said mounting surface is angled such that it does not form a right angle in relation to at least one of the adjacent surfaces of said light emitter.
71. The LED package of claim 65 , wherein said mounting surface has a smaller surface area than each of said primary emission surfaces.
72. The LED package of claim 64 , wherein said LED is mounted to said submount without wire bonds.
73. The LED package of claim 64 , wherein at least a portion of said submount is reflective.
74. The LED package of claim 64 , wherein said LED is electrically connected by wire bonds.
75. The LED package of claim 64 , wherein said mounting surface at least in part comprises a reflective material arranged such that it reflects light emitted from said light emitter.
76. The LED package of claim 64 , wherein said substrate is transparent.
77. The LED package of claim 64 , wherein said substrate is comprised of an electrically conductive material.
78. The LED package of claim 64 , wherein said substrate is comprised of a thermally conductive material.
79. The LED package of claim 64 , wherein said substrate is a growth substrate.
80. The LED package of claim 64 , further comprising a phosphor layer disposed on at least a portion of the light emission surfaces of said LED.
81. The LED package of claim 64 , wherein a primary emission surface is a substrate.
82. The LED package of claim 64 , wherein a primary emission surface is on the side of said first semiconductor layer.
83. The LED package of claim 64 , wherein a primary emission surface is on the side of said second semiconductor layer.
84. The LED package of claim 64 , wherein said LED is comprised of a plurality of interconnected sub-LEDs.
85. The LED package of claim 64 , wherein said encapsulant further comprises a wavelength conversion material.
86. The LED package of claim 64 , wherein said encapsulant further comprises light scattering particles.
87. The LED package of claim 64 , wherein said first and second semiconductor materials are comprised of a Group III Nitride material.