Thick film resistive heater compositions comprising Ag and RuO
View Patent ↗Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO 2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (R tr ) value between 0.75 and 1.50.
1. A thick film resistor paste composition comprising a resistor composition dispersed in an organic vehicle, said resistor composition comprising:
(a) 3 to 60% by weight RuO 2 conductive material,
(b) 5 to 75% by weight Ag conductive material,
(c) 15 to 60% by weight glass frit wherein the glass comprises by weight 25-45% SiO 2 , 2-15% Al 2 O 3 , O-3% ZrO 2 , O-8% B 2 O 3 , 5-15% CuO, 0-8% BaO, 0-3% P 2 O 5 , and 20-50% Bi 2 O 3 , and optionally
(d) 0 to 10% by weight copper oxide or precursor thereof, and
(e) 0 to 20% by weight bismuth oxide or precursor thereof
wherein said resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher.
2. The composition of claim 1 wherein said Ag conductive material is selected from the group consisting of Ag and mixtures of Ag and Pd, wherein the mixture of Ag and Pd comprises 90% to 99.99% by weight Ag and 0.01% to 10% by weight Pd, based upon the weight of the mixture of Ag and Pd.
3. The composition of claim 1 comprising (a) 10 to 50% by weight RuO 2 conductive material.
4. The composition of claim 1 further comprising (d) up to 10% by weight copper oxide or precursor thereof.
5. The composition of claim 1 further comprising (e) up to 20% by weight bismuth oxide or precursor thereof.
6. A fired resistor composition according to any of claims 1 to 5 .
7. The method of forming a fired resistor composition on a substrate comprising the steps of:
(a) forming on said substrate a thin layer of thick film resistor paste according to claim 1 ,
(b) drying said thin layer,
(c) firing said dried layer between 750° C. and 950° C. to form a fired resistor composition with a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher.
8. The method of claim 7 wherein said fired resistor composition has a resistance thickness ratio (R tr ) value between 0.75 and 1.50.
9. The method of claim 7 wherein said dried thin layer formed in step (b) has a dry thickness of 50 microns or less.
10. The method of claim 7 wherein said thick film resistor paste composition has Ag conductive material is selected from the group consisting of Ag and mixtures of Ag and Pd, wherein the mixture of Ag and Pd comprises 90% to 99.9% by weight Ag and 0.1% to 10% by weight Pd, based upon the weight of the mixture of Ag and Pd.
11. The method of claim 7 wherein said thick film resistor paste composition further comprises up to 10% by weight copper oxide or precursor thereof.
12. The method of claim 7 wherein said thick film resistor paste composition further comprises up to 20% by weight bismuth oxide or precursor thereof.
13. A thick film resistor paste composition according to claim 1 wherein said dry thickness is in the range of 3 to 50 microns.