Adhesive sheet and method of backgrinding semiconductor wafer
After an adhesive sheet is pasted on a semiconductor wafer, an adhesive of the sheet increases tight attachment to the semiconductor wafer because wetting spreads over time. Due to this, at the time of peeling the adhesive sheet from the ground semiconductor wafer, the semiconductor wafer used to be damaged. This phenomenon is likely to occur for a thinner semiconductor wafer. The present invention resides in an adhesive sheet including a substrate and an adhesive layer disposed on the substrate. The substrate is formed of an ethylene/vinyl acetate copolymer having a vinyl acetate content of 10% by mass or less. The adhesive layer contains 100 parts by mass of a (meth)acrylate ester copolymer, 1 to 10 parts by mass of a cross-linker, 0.05 to 5 parts by mass of a silicone compound. The (meth)acrylate ester copolymer is formed of a copolymer produced by polymerizing a (meth)acrylate ester monomer and a functional-group-containing monomer.
1. A method of backgrinding a semiconductor wafer, the method comprising:
a pasting step of pasting an adhesive sheet on a circuit-forming surface of a semiconductor wafer;
a grinding step of backgrinding the semiconductor wafer after the pasting step; and
a peeling step of peeling the adhesive sheet after the grinding step, wherein
the adhesive sheet comprises:
a substrate formed of an ethylene/vinyl acetate copolymer having a vinyl acetate content of 10% by mass or less; and
an adhesive layer disposed on the substrate, wherein:
the adhesive layer contains 100 parts by mass of a (meth)acrylate ester copolymer, 1 to 10 parts by mass of a cross-linker, and 0.05 to 5 parts by mass of a silicone compound, and
the (meth) acrylate ester copolymer is a copolymer produced by polymerizing a (meth) acrylate ester monomer and a functional-group-containing monomer.
2. The method according to claim 1 , wherein the functional-group-containing monomer has one or both of a hydroxyl group and a carboxyl group.
3. The method according to claim 2 , wherein the cross-linker is an isocyanate compound.
4. The method according to claim 1 , wherein the silicone compound has a structure represented by chemical formula (I):
wherein R and R′ each represent alkyl having a carbon number of 1 to 6;
X represents epoxy, carboxyl, hydroxyl, carbinol, amino, (meth)acryl, or vinyl;
Y is any unit of polyether, alkyl, and aralkyl;
A total number of subscripts k, I, m, and n is an integer of 1 to 80; and
an order of each monomer unit containing the subscript k, I, m, or n is not limited to an order designated in chemical formula (I).