Semiconductor device and method of forming extended semiconductor device with fan-out interconnect structure to reduce complexity of substrate

1. A semiconductor device, comprising:

a first semiconductor die;

an insulating material deposited in a peripheral region around the first semiconductor die;

an interconnect structure formed over the first semiconductor die and including,

(a) a first conductive layer extending from a contact pad of the first semiconductor die over a surface of the insulating material, and

(b) a plurality of bumps formed over the first conductive layer; and

a substrate including a second conductive layer, wherein the first semiconductor die is mounted to the substrate with the bumps contacting the second conductive layer and a fan-out ratio (FR) of an I/O density of the first semiconductor die to an I/O density of the substrate is given as FR=p 2 *(N/d 2 ), where p is package pitch, N is number of non-redundant I/O per die, and d is die size.

2. The semiconductor device of claim 1 , wherein the I/O density of the substrate is less than the I/O density of the first semiconductor die.

3. The semiconductor device of claim 1 , wherein the interconnect structure further includes a plurality of conductive columns formed between the bumps and first conductive layer.

4. The semiconductor device of claim 1 , further including a second semiconductor die disposed over the interconnect structure adjacent to the first semiconductor die.

5. The semiconductor device of claim 4 , wherein an I/O density of the second semiconductor die is greater than the I/O density of the first semiconductor die.

6. The semiconductor device of claim 1 , wherein the surface of the insulating material is coplanar with an active surface of the first semiconductor die.

7. A semiconductor device, comprising:

a first semiconductor die;

an insulating material disposed in a peripheral region around the first semiconductor die;

a first input/output (I/O) density conversion structure formed over the first semiconductor die and including,

(a) a conductive layer formed over the first semiconductor die and a surface of the insulating material, and

(b) a plurality of interconnect structures formed over the conductive layer and surface of the insulating material; and

a second I/O density conversion structure disposed over the first I/O density conversion structure, wherein the first I/O density conversion structure translates an I/O density of the first semiconductor die to a second I/O density and the second I/O density conversion structure translates the second I/O density to a third I/O density, wherein a fan-out ratio (FR) of the first I/O density to the second I/O density is given as FR=p 2 *(N/d 2 ), where p is package pitch, N is number of non-redundant I/O per die, and d is die size.

8. The semiconductor device of claim 7 , further including a second semiconductor die disposed over the second I/O density conversion structure.

9. The semiconductor device of claim 7 , wherein the plurality of interconnect structures includes a conductive column.

10. The semiconductor device of claim 7 , further including a second semiconductor die disposed over the first I/O density conversion structure.

11. The semiconductor device of claim 10 , wherein the second semiconductor die includes an I/O density different from the I/O density of the first semiconductor die.

12. The semiconductor device of claim 7 , further including a discrete component disposed adjacent to the first semiconductor die.

13. The semiconductor device of claim 7 , wherein the FR is less than or equal to 10.

14. The semiconductor device of claim 7 , wherein the surface of the insulating material is coplanar with an active surface of the first semiconductor die.

15. A semiconductor device, comprising:

a first semiconductor die;

a second semiconductor die, wherein a first I/O density of the first semiconductor die is different from a second I/O density of the second semiconductor die;

an insulating material disposed in a peripheral region around the first semiconductor die and second semiconductor die;

a first input/output (I/O) density conversion structure disposed over the first semiconductor die and second semiconductor die and including,

(a) a conductive layer formed over the first semiconductor die and second semiconductor die and insulating material, and

(b) a plurality of interconnect structures formed over the conductive layer and insulating material, wherein the first I/O density conversion structure translates the first I/O density of the first semiconductor die and the second I/O density of the second semiconductor die to a third I/O density; and

a second I/O density conversion structure disposed over the first I/O density conversion structure, wherein the second I/O density conversion structure translates the third I/O density to a fourth I/O density, wherein a fan-out ratio (FR) of the third I/O density to the fourth I/O density is given as FR=p 2 *(N/d 2 ), where p is package pitch, N is number of non-redundant I/O per die, and d is die size.

16. The semiconductor device of claim 15 , wherein the plurality of interconnect structures includes:

a conductive column; and

a bump formed over the conductive column.

17. The semiconductor device of claim 15 , wherein the FR is less than or equal to 10.