Enhanced flip chip package
View Patent ↗A flip chip package structure is proposed in which a redistribution layer (RDL) is disposed on a surface of both a semiconductor chip and one or more lateral extensions of the semiconductor chip surface. The lateral extensions may be made using, e.g., a reconstituted wafer to implement a fanout region lateral to one or more sides of the semiconductor chip. One or more electrical connectors such as solder bumps or copper cylinders may be applied to the RDL, and an interposer such as a PCB interposer may be connected to the electrical connectors. In this way, a relatively tight semiconductor pad pitch may be accommodated and translated to an appropriate circuit board pitch without necessarily requiring a silicon or glass interposer.
1. A semiconductor device, comprising:
a first semiconductor chip having at least one electrically conductive contact at a first side of the first semiconductor chip;
an extension layer extending laterally from one or more sides of the first semiconductor chip;
a redistribution layer disposed on a surface of the extension layer and the first side of the first semiconductor chip, the redistribution layer electrically coupling the at least one electrically conductive contact of the first semiconductor chip to at least one electrical connector; and
an interposer electrically coupled to the at least one electrical connector and having a plurality of electrically conductive contacts at a surface of the interposer facing away from the redistribution layer; and
a ball grid array disposed on the plurality of electrically conductive contacts of the interposer, wherein the at least one electrical connector comprises a plurality of copper pillars disposed between the redistribution layer and the interposer.
2. The semiconductor device of claim 1 , further comprising a molding material at least partially enclosing the first semiconductor chip and the redistribution layer, and in physical contact with the interposer.
3. The semiconductor device of claim 1 , wherein the at least one electrically conductive contact of the first semiconductor chip is part of a first plurality of electrically conductive contacts at the first side of the first semiconductor chip, and the at least one electrical connector is part of a plurality of electrical connectors electrically coupled to the interposer, and
wherein a first pitch of the first plurality of electrically conductive contacts is smaller than a second pitch of the plurality of electrical connectors.
4. The semiconductor device of claim 3 , wherein the first pitch is below a 100 micron pitch and the second pitch is at least a 150 micron pitch.
5. The semiconductor device of claim 3 , wherein the second pitch is smaller than a third pitch of the ball grid array.
6. The semiconductor device of claim 1 , further comprising a circuit component embedded in the interposer, the circuit component having at least one electrically conductive contact facing the first semiconductor chip.
7. The semiconductor device of claim 6 , wherein the circuit component comprises a second semiconductor chip.
8. The semiconductor device of claim 1 , wherein the at least one electrical connector is part of a plurality of electrical connectors electrically coupled to the interposer, at least one of the plurality of electrical connectors is disposed under the extension layer, and at least another of the plurality of electrical connectors is disposed under the first semiconductor chip.
9. The semiconductor device of claim 1 , further comprising a second semiconductor chip having at least one electrically conductive contact at a first surface of the second semiconductor chip that is facing in a same direction as the first surface of the first semiconductor chip,
wherein the extension layer further extends laterally from one or more sides of the second semiconductor chip, and wherein the redistribution layer is further disposed on the first surface of the second semiconductor chip, and
wherein the at least one electrical connector is part of a plurality of electrical connectors electrically coupled to the interposer, and wherein the redistribution layer electrically couples the at least one electrically conductive contact of the second semiconductor chip to at least another of the plurality of electrical connectors.
10. A method for manufacturing a semiconductor device, the method comprising:
forming a redistribution layer on a surface of a layer that comprises a first semiconductor chip and an extension layer, wherein the redistribution layer extends beyond a boundary of the first semiconductor chip;
forming a plurality of electrical connectors on the redistribution layer, wherein at least one of the electrical connectors is within a boundary of the first semiconductor chip and at least another of the electrical connectors is disposed outside of the boundary of the first semiconductor chip;
connecting an interposer to the plurality of electrical connectors; and
forming a ball grid array on a surface of the interposer that is opposite the plurality of electrical connectors,
wherein a first pitch of electrically conductive contacts of the first semiconductor chip is smaller than a second pitch of the electrical connectors, and wherein the second pitch is smaller than a third pitch of the ball grid array, and
wherein the plurality of electrical connectors comprises a plurality of copper cylinders.
11. The method of claim 10 , further comprising enclosing at least a portion of the first semiconductor chip and the redistribution layer in a molding material, wherein the molding material further contacts the interposer, and wherein the ball grid array is exposed by the molding material.
12. The method of claim 10 , wherein the interposer comprises a PCB interposer.
13. The method of claim 10 , further comprising embedding a second semiconductor chip in the interposer.