Patent Assignment
Reel/Frame 054772/0918
Assignment of Assignor's Interest
Recorded: 2020-12-16
Pages: 17
Assignor
INTEL CORPORATION
Executed: 2020-11-13
Assignee
GOOGLE LLC
1600 AMPHITHEATRE PARKWAY, MOUNTAIN VIEW, CALIFORNIA, 94043
Covered Properties
(64)
Memory Management Circuitry Translation Information Retreival During Debugging
Translation Information Retrieval Transparent to Processor Core
Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate
Multigate Device with Recessed Strain Regions
Methods of Forming Improved Epi Fill on Narrow Isolation Bounded Source/Drain Regions and Structures Formed Thereby
Semiconductor Device Having Self-Aligned Epitaxial Source and Drain Extensions
Silicon Germanium and Germanium Multigate and Nanowire Structures for Logic and Multilevel Memory Applications
Mechanism for Effectively Caching Streaming and Non-Streaming Data Patterns
Fabrication of Germanium Nanowire Transistors
Power Management for Multiple Processor Cores
Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate
Isolation for Nanowire Devices
Fabrication of Germanium Nanowire Transistors
Silicon Germanium and Germanium Multigate and Nanowire Structures for Logic and Multilevel Memory Applications
Techniques for Current Mirror Circuits
Patent:
8,188,792 →
Application:
12/889,772 →
Mechanism for Effectively Caching Streaming and Non-Streaming Data Patterns
Enhanced Flip Chip Package
Isolation for Nanowire Devices
Trench Confined Epitaxially Grown Device Layer(S)
Tin Doped Iii-V Material Contacts
Deep Gate-All-Around Semiconductor Device Having Germanium or Group Iii-V Active Layer
Chip Arrangements
Power Management for Multiple Processor Cores
Application:
13/847,392 →
Publication:
US 2013/0219196
Iii-V Layers for N-Type and P-Type Mos Source-Drain Contacts
Self-Aligned Contact Metallization for Reduced Contact Resistance
Group Iii-N Nanowire Transistors
Structure having a planar bonding surface
Nanowire Structures Having Wrap-Around Contacts
Nanowire Structures Having Non-Discrete Source and Drain Regions
Semiconductor Devices Having Modulated Nanowire Counts
Common-Substrate Semiconductor Devices Having Nanowires or Semiconductor Bodies with Differing Material Orientation or Composition
Stacked Memory Allowing Variance in Device Interconnects
Methods to Enhance Doping Concentration in Near-Surface Layers of Semiconductors and Methods of Making Same
Stress Buffer Layer for Integrated Microelectromechanical Systems (Mems)
Enhanced Flip Chip Package
Silicon Germanium and Germanium Multigate and Nanowire Structures for Logic and Multilevel Memory Applications
Trench Confined Epitaxially Grown Device Layer(S)
Semiconductor Devices
Silicon Germanium and Germanium Multigate and Nanowire Structures for Logic and Multilevel Memory Applications
Method for Handling Very Thin Device Wafers
Stress Buffer Layer for Integrated Microelectromechanical Systems (Mems)
Self-Aligned Contact Metallization for Reduced Contact Resistance
Three Dimensional Structures Within Mold Compound
Nanowire Structures Having Non-Discrete Source and Drain Regions
Deep Gate-All-Around Semiconductor Device Having Germanium or Group Iii-V Active Layer
Iii-V Layers for N-Type and P-Type Mos Source-Drain Contacts
Group Iii-N Nanowire Transistors
Self-Aligned Contact Metallization for Reduced Contact Resistance
Common-Substrate Semiconductor Devices Having Nanowires or Semiconductor Bodies with Differing Material Orientation or Composition
Redistribution Layer Lines
Deep Gate-All-Around Semiconductor Device Having Germanium or Group Iii-V Active Layer
Integrated Circuit Package Stack
Group Iii-N Nanowire Transistors
Iii-V Layers for N-Type and P-Type Mos Source-Drain Contacts
Nanowire Structures Having Non-Discrete Source and Drain Regions
CMOS HAVING A Ge CHANNEL PMOS AND III-V CHANNEL NMOS FORMED ON A SILICON SUBSTRATE
Application:
15/435,245 →
Publication:
US 2017/0162453
Deep Gate-All-Around Semiconductor Device Having Germanium or Group Iii-V Active Layer
Group Iii-N Nanowire Transistors
Redistribution Layer Lines
Application:
15/677,835 →
Publication:
US 2018/0068939
Deep Gate-All-Around Semiconductor Device Having Germanium or Group Iii-V Active Layer
Group Iii-N Nanowire Transistors
Nanowire Structures Having Wrap-Around Contacts
Nanowire Structures Having Non-Discrete Source and Drain Regions
Nanowire Structures Having Wrap-Around Contacts
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 27, 2005
From: MOYER, WILLIAM C.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 016629/0928 →
Assignment of Assignor's Interest
May 27, 2005
From: MOYER, WILLIAM C.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 016631/0004 →
Assignment of Assignor's Interest
Jun 21, 2005
From: KAVALIEROS, JACK; CAPPELLANI, ANNALISA; BRASK, JUSTIN K.; DOCZY, MARK L.
To: INTEL CORPORATION
Reel/Frame 016716/0202 →
Assignment of Assignor's Interest
Dec 27, 2005
From: KAVALIEROS, JACK T.; BRASK, JUSTIN K.; DATTA, SUMAN; DOYLE, BRIAN S.
To: INTEL CORPORATION
Reel/Frame 017425/0863 →
Security Agreement
Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
Security Agreement
Jul 11, 2008
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 021217/0368 →
Assignment of Assignor's Interest
Jan 14, 2009
From: FINKELSTEIN, LEV; ROTEM, EFRAIM; COHEN, AVIAD; RONEN, RONNY
To: INTEL CORPORATION
Reel/Frame 022104/0707 →
Assignment of Assignor's Interest
Apr 27, 2009
From: JIN, BEEN-YIH; KAVALIEROS, JACK T.; METZ, MATTHEW V.; RADOSAVLIEVIC, MARKO
To: INTEL CORPORATION
Reel/Frame 022600/0156 →
Assignment of Assignor's Interest
Jan 11, 2010
From: RANADE, PUSHKAR; ZAWADZKI, KEITH; AUTH, CHRISTOPHER
To: INTEL CORPORATION
Reel/Frame 023760/0126 →
Assignment of Assignor's Interest
Mar 29, 2010
From: SELL, BERNHARD; GHANI, TAHIR; MURTHY, ANAND; GOMEZ, HARRY
To: INTEL CORPORATION
Reel/Frame 024174/0549 →
Security Agreement
May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
Assignment of Assignor's Interest
Jul 8, 2010
From: JIN, BEEN-YIH; DOYLE, BRIAN S.; KAVALIEROS, JACK T.; CHAU, ROBERT S.
To: INTEL CORPORATION
Reel/Frame 024654/0123 →
Assignment of Assignor's Interest
Oct 12, 2010
From: NARAYAN, SRIRAM; SHUMARAYEV, SERGEY
To: ALTERA CORPORATION
Reel/Frame 025123/0897 →
Assignment of Assignor's Interest
Jul 28, 2011
From: SHAH, UDAY; CHU-KUNG, BENJAMIN; JIN, BEEN-YIH; PILLARISETTY, RAVI
To: INTEL CORPORATION
Reel/Frame 026666/0335 →
Assignment of Assignor's Interest
Jan 10, 2012
From: MEYER, THORSTEN; OFNER, GERALD; WAIDHAS, BERND
To: INTEL MOBILE COMMUNICATIONS GMBH
Reel/Frame 027508/0672 →
Security Agreement
Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
Security Agreement
Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
Release of Security Interest
Jan 23, 2015
From: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 034799/0554 →
Release of Security Interest
Jan 23, 2015
From: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 034799/0388 →
Assignment of Assignor's Interest
Jan 23, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: INTEL CORPORATION
Reel/Frame 034802/0847 →
Release of Security Interest
Jan 23, 2015
From: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 034799/0777 →
Release of Security Interest
Jan 23, 2015
From: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 034799/0664 →
Assignment of Assignor's Interest
Jun 22, 2015
From: SPRANGLE, ERIC; ROHILLAH, ANWAR; CAVIN, ROBERT
To: INTEL CORPORATION
Reel/Frame 035878/0162 →
Assignment of Assignor's Interest
Jun 22, 2015
From: SPRANGLE, ERIC; ROHILLAH, ANWAR; CAVIN, ROBERT
To: INTEL CORPORATION
Reel/Frame 035878/0151 →
Change of Name
Nov 6, 2015
From: INTEL MOBILE COMMUNICATIONS GMBH
To: INTEL DEUTSCHLAND GMBH
Reel/Frame 037057/0061 →