Tunnel junction via

1. A memory device comprising a plurality of tunnel junctions (TJs), the memory device comprising:

a bottom wiring layer;

a top wiring layer;

a plurality of TJs contacting the bottom wiring layer and the top wiring layer; and

a plurality of tunnel junction vias (TJVs) contacting the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs each have a lower resistance the each of the plurality of TJs, wherein the plurality of TJVs comprise at least one concave surface, and wherein the at least one concave surface of the plurality of TJVs is configured to trap etched material during formation of the TJVs so as to reduce the resistance of the plurality of TJVs.

2. The memory device of claim 1 , wherein at least one of the plurality of TJVs is larger than at least one of the plurality of TJs.

3. The memory device of claim 1 , wherein the bottom wiring layer comprises a front end of line (FEOL) wiring layer, and the top wiring layer comprises a back end of line (BEOL) wiring layer.

4. The memory device of claim 1 , wherein the plurality of TJs and the plurality of TJVs each comprise two layers of conductive material separated by a tunnel barrier.

5. The memory device of claim 1 , wherein the plurality of TJVs are electrically addressed separately from the plurality of TJs.

6. A memory device comprising a plurality of tunnel junctions (TJs), the memory device comprising:

a bottom wiring layer;

a top wiring layer;

a plurality of TJs contacting the bottom wiring layer and the top wiring layer; and

a plurality of tunnel junction vias (TJVs) contacting the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs each comprise a short circuit between the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs comprise at least one concave surface, and wherein the at least one concave surface of the plurality of TJVs is configured to trap etched material so as to cause short-circuit breakdown of the plurality of TJVs when subjected to a voltage configured to cause short-circuit breakdown of the plurality of TJVs.

7. The memory device of claim 6 , wherein at least one of the plurality of TJVs is larger than at least one of the plurality of TJs.

8. The memory device of claim 6 , wherein the bottom wiring layer comprises a front end of line (FEOL) wiring layer, and the top wiring layer comprises a back end of line (BEOL) wiring layer.

9. The memory device of claim 6 , wherein the plurality of TJs and the plurality of TJVs each comprise two layers of conductive material separated by a tunnel barrier.

10. The memory device of claim 6 , wherein the plurality of TJVs are electrically addressed separately from the plurality of TJs.

11. A tunnel junction via (TJV) connecting a top wiring layer to a bottom wiring layer for the purpose of interlayer low-resistance connection in a memory device, comprising:

a first layer of a conductive material;

a tunnel barrier on top of the first layer of conductive material; and

a second layer of the conductive material on top of the tunnel barrier, wherein the TJV comprises a short circuit between the bottom wiring layer and the top wiring layer, wherein the TJV comprises at least one concave surface, and wherein the at least one concave surface of the TJV is configured to trap etched material so as to cause short-circuit breakdown of the TJV when the TJV is subjected to a voltage configured to cause short-circuit breakdown of the TJV.

12. The TJV of claim 11 , wherein the bottom wiring layer comprises a front end of line (FEOL) wiring layer, and the top wiring layer comprises a back end of line (BEOL) wiring layer.