Printed transistor and fabrication method
View Patent ↗A method for fabricating a thin film transistor includes printing source, drain and channel regions on a passivated transparent substrate, forming a gate dielectric over the channel region and forming a gate conductor over the gate dielectric. A permanent antireflective coating is deposited over the source region, drain region and gate electrode, and an interlevel dielectric layer is formed over the permanent antireflective coating. Openings in the permanent antireflective coating and the interlevel dielectric layer are formed to provide contact holes to the source region, drain region and gate electrode. A conductor is deposited in the contact holes to electrically connect to the source region, drain region and gate electrode. Thin film transistor devices and other methods are also disclosed.
1. A method for fabricating a thin film transistor, comprising:
printing source, drain and channel regions on a passivated transparent substrate;
forming a gate dielectric over the channel region;
forming a gate conductor over the gate dielectric;
depositing a permanent antireflective coating over the source region, drain region and gate electrode;
forming an interlevel dielectric layer over the permanent antireflective coating;
forming openings in the permanent antireflective coating and the interlevel dielectric layer to provide contact holes to the source region, drain region and gate electrode; and
depositing a conductor in the contact holes to electrically connect to the source region, drain region and gate electrode.
2. The method as recited in claim 1 , wherein printing includes one of relief printing, reverse type offset printing, an ink jet printing, a screen printing, nanoimprinting, embossing, micro-contact printing, replica molding, microtransfer molding, solvent-assisted micromolding, or thermal assisted embossing.
3. The method as recited in claim 1 , wherein depositing a permanent antireflective coating includes forming the permanent antireflective coating from a material that is etchable selective to the interlevel dielectric layer.
4. The method as recited in claim 1 , further comprising:
depositing a resist layer over the permanent antireflection coating;
developing the resist layer to form features having a contact hole image over the source region, drain region and gate electrode; and the step of forming openings includes:
decomposing and removing the features formed in the interlevel dielectric layer to form a reverse image of contacts through the interlevel dielectric layer.
5. The method as recited in claim 4 , further comprising etching the permanent antireflection coating through the reverse image to form the openings.
6. The method as recited in claim 1 , wherein the interlevel dielectric layer includes a photo-patternable low dielectric constant (PPLK) material.
7. The method as recited in claim 6 , wherein forming an interlevel dielectric layer includes curing the interlevel dielectric layer to form a permanent interlevel dielectric layer.
8. A method for fabricating a thin film transistor, comprising:
printing source, drain and channel regions on a passivated transparent substrate;
forming a gate dielectric over the channel region;
forming a gate conductor over the gate dielectric;
forming an interlevel dielectric layer from a photo-patternable low dielectric constant (PPLK) material;
curing the PPLK material in the interlevel dielectric layer to provide a permanent dielectric layer;
forming openings in the interlevel dielectric layer to provide contact holes to the source region, drain region and gate electrode; and
depositing a conductor in the contact holes to electrically connect to the source region, drain region and gate electrode.
9. The method as recited in claim 8 , wherein printing includes one of relief printing, reverse type offset printing, an ink-jet printing, a screen printing, nanoimprinting, embossing, micro-contact printing, replica molding, microtransfer molding, solvent-assisted micromolding, or thermal assisted embossing.
10. The method as recited in claim 8 , further comprising:
depositing a permanent antireflective coating over the source region, drain region and gate electrode and forming the openings through the permanent antireflective coating.
11. The method as recited in claim 10 , wherein depositing the permanent antireflective coating includes forming the permanent antireflective coating from a material that is etchable selective to the interlevel dielectric layer.
12. The method as recited in claim 10 , further comprising etching the permanent antireflection coating through the openings.
13. The method as recited in claim 8 , further comprising:
depositing a resist layer over the source region, drain region and gate electrode;
developing the resist layer to form features having a contact hole image over the source region, drain region and gate electrode; and the step of forming openings includes:
decomposing and removing the features formed in the interlevel dielectric layer to form a reverse image of contacts through the interlevel dielectric layer.