Semiconductor device and method of forming conductive pillar having an expanded base
A semiconductor device has a first semiconductor die and conductive vias in the first semiconductor die. The conductive vias can be formed by extending the vias partially through a first surface of the first semiconductor die. A portion of a second surface of the first semiconductor die is removed to expose the conductive vias. A plurality of conductive pillars is formed over the first surface the first semiconductor die. The conductive pillars include an expanded base electrically connected to the conductive vias. A width of the expanded base of the conductive pillars is greater than a width of a body of the conductive pillars. A conductive layer is formed over a second surface of the first semiconductor die. The conductive layer is electrically connected to the conductive vias. A second semiconductor die is mounted to the first semiconductor die with a second conductive pillar having an expanded base.
1. A semiconductor device, comprising:
a first semiconductor die;
a first conductive layer formed over a first surface of the first semiconductor die; and
a first conductive pillar formed in contact with the first conductive layer, the first conductive pillar including,
(a) a body with a first width, and
(b) an expanded base with a second width at the first conductive layer greater than the first width,
wherein the expanded base increases in width from the first width to the second width in a linear manner.
2. The semiconductor device of claim 1 , further including a conductive via formed in the first semiconductor die.
3. The semiconductor device of claim 2 , further including a second conductive layer formed over a second surface of the first semiconductor die opposite the first surface of the first semiconductor die and electrically connected to the conductive via.
4. The semiconductor device of claim 1 , further including a second semiconductor die disposed over the first semiconductor die.
5. The semiconductor device of claim 4 , further including a second conductive pillar formed over the second semiconductor die, the second conductive pillar including an expanded base.
6. A semiconductor device, comprising:
a first semiconductor die;
a conductive via extending into the first semiconductor die;
a conductive pillar including a body and an expanded base formed over a first surface of the first semiconductor die and electrically connected to the conductive via, wherein the body has a first width and the expanded base increases in width from the first width to a second width at the first surface of the first semiconductor die; and
a first conductive layer formed over a second surface of the first semiconductor die opposite the first surface of the first semiconductor die and electrically connected to the conductive via.
7. The semiconductor device of claim 6 , wherein a width of the expanded base of the conductive pillar is greater than a width of the body of the conductive pillar.
8. The semiconductor device of claim 6 , wherein the material of the conductive pillar includes a non-fusible material.
9. The semiconductor device of claim 8 , further including a fusible cap formed over the conductive pillar.
10. The semiconductor device of claim 6 , further including a second semiconductor die disposed over the first semiconductor die and electrically connected to the conductive pillar through the conductive via.
11. The semiconductor device of claim 6 , further including a second conductive layer formed between the first surface of the first semiconductor die and conductive pillar.
12. A semiconductor device, comprising:
a first semiconductor die;
a conductive via extending into the first semiconductor die; and
a conductive pillar formed over a first surface of the first semiconductor die and electrically connected to the conductive via, wherein the conductive pillar includes a body and an expanded base continuously flared out from a first width of the body to a second width at the first surface of the first semiconductor die.
13. The semiconductor device of claim 12 , further including a conductive layer formed over a second surface of the first semiconductor die opposite the first surface of the first semiconductor die and electrically connected to the conductive via.
14. The semiconductor device of claim 12 , wherein a width of the expanded base of the conductive pillar is greater than a width of the body of the conductive pillar.
15. The semiconductor device of claim 12 , wherein the conductive pillar includes a non-fusible material.
16. The semiconductor device of claim 15 , further including a fusible cap formed over the conductive pillar.
17. The semiconductor device of claim 12 , further including a second semiconductor die disposed over the first semiconductor die and electrically connected to the conductive pillar through the conductive via.
18. The semiconductor device of claim 12 , further including a conductive layer formed between the first surface of the first semiconductor die and conductive pillar.