Semiconductor Method of Device of Forming a Fan-Out PoP Device with PWB Vertical Interconnect Units

1 . A method of making a semiconductor device, comprising:

providing a carrier with a die attach area;

mounting a first semiconductor die to the die attach area;

mounting a modular interconnect unit over the carrier in a peripheral region around the first semiconductor die;

depositing a first encapsulant over the carrier, first semiconductor die, and modular interconnect unit;

removing a portion of the first encapsulant to expose the first semiconductor die and modular interconnect unit;

removing the carrier; and

forming an interconnect structure over the first semiconductor die and modular interconnect unit.

2 . The method of claim 1 , wherein the modular interconnect unit includes a core with a vertical interconnect structure formed through the core and overlapping the core by 0-200 micrometers.

3 . The method of claim 2 , wherein the vertical interconnect structure includes an opening filled with a conductive paste or polymer plug.

4 . The method of claim 1 , wherein the modular interconnect unit is offset from the semiconductor die and a height of the modular interconnect unit is less than a height of the semiconductor die.

5 . The method of claim 1 , further including:

providing a second semiconductor die; and

mounting the second semiconductor die to the modular interconnect unit.

6 . The method of claim 1 , wherein the modular interconnect unit is formed from a second encapsulant or a printed circuit board (PCB) with a coefficient of thermal expansion (CTE) greater than the CTE of the first encapsulant.

7 . A method of making a semiconductor device, comprising:

providing a carrier;

mounting a modular interconnect unit over the carrier in a peripheral region of the semiconductor die;

mounting a semiconductor die to the carrier;

depositing an encapsulant over the carrier, semiconductor die, and modular interconnect unit; and

removing a portion of the encapsulant to expose the modular interconnect unit and the semiconductor die.

8 . The method of claim 7 , wherein the modular interconnect unit includes a core with a vertical interconnect structure formed through the core.

9 . The method of claim 7 , wherein the modular interconnect unit has a square shape, rectangular shape, cross-shape, angled or L-shape, circular shape, or oval shape.

10 . The method of claim 7 , further including forming an insulating layer over a back surface of the semiconductor die prior to exposing the modular interconnect unit with respect to the encapsulant.

11 . The method of claim 7 , wherein removing the portion of encapsulant further includes:

removing a first portion of the encapsulant from over the semiconductor die to expose a back surface of the semiconductor die while leaving a second portion of the encapsulant over the modular interconnect unit; and

removing the second portion of the encapsulant to expose the modular interconnect unit.

12 . The method of claim 7 , wherein the modular interconnect unit forms part of an interlocking pattern around the semiconductor die and a height of the modular interconnect unit is less than a height of the semiconductor die.

13 . The method of claim 7 , further including forming an insulating layer over the semiconductor device to reduce warpage.

14 . A method of making a semiconductor device, comprising:

providing a semiconductor die;

disposing a modular interconnect unit in a peripheral region around the semiconductor die; and

depositing an encapsulant over the semiconductor die and modular interconnect unit.

15 . The method of claim 14 , wherein the modular interconnect unit includes a core with a conductive interconnect structure formed through the core.

16 . The method of claim 15 , wherein the conductive interconnect structure includes a metal cap and a protection layer formed over the metal cap.

17 . The method of claim 15 , wherein the modular interconnect unit includes multiple rows of vertical interconnect structures or bumps.

18 . The method of claim 14 , wherein the modular interconnect unit has a square shape, rectangular shape, cross-shape, angled or L-shape, circular shape, or oval shape.

19 . The method of claim 14 , further including forming a vertical interconnect structure through the modular interconnect unit after depositing the encapsulant over the semiconductor die and modular interconnect unit.

20 . The method of claim 14 , further including forming an insulating layer over the semiconductor device to reduce warpage.

21 . A semiconductor device, comprising:

a semiconductor die;

a modular interconnect unit disposed in a peripheral region around the semiconductor die; and

an encapsulant deposited around the semiconductor die and modular interconnect unit.

22 . The semiconductor device of claim 21 , wherein the modular interconnect unit includes a core with a vertical interconnect structure formed through the core.

23 . The semiconductor device of claim 21 , wherein the modular interconnect unit has a square shape, rectangular shape, cross-shape, angled or L-shape, circular shape, or oval shape.

24 . The semiconductor device of claim 21 , wherein the modular interconnect unit forms part of an interlocking pattern around the semiconductor die and a height of the modular interconnect unit is less than a height of the semiconductor die.

25 . The semiconductor device of claim 21 , further including an insulating layer formed over the semiconductor device to reduce warpage.