High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology
When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing an upper portion of the final work function metal, for instance a titanium nitride material in P-channel transistors. In some illustrative embodiments, the selective removal of the metal-containing electrode material in an upper portion of the gate opening may be accomplished without unduly increasing overall process complexity.
1. A method, comprising:
forming a metal-containing electrode material in a first gate opening of a first gate electrode structure of a first transistor and in a second gate opening of a second gate electrode structure of a second transistor;
forming a sacrificial material selectively in said second gate opening so as to cover a portion of said metal-containing electrode material at a bottom of said second gate opening while exposing an upper portion of said metal-containing electrode material in an upper portion of said second gate opening and substantially an entirety of said metal-containing electrode material in said first gate opening;
removing said exposed entirety of said metal-containing electrode material from said first gate opening and said exposed upper portion of said metal-containing electrode material from said second gate opening while using said sacrificial material as an etch mask so as to preserve a lower portion of said metal-containing electrode material at said bottom of said second gate opening;
removing said sacrificial material from said second gate opening; and
forming a conductive fill material in said first and second gate openings.
2. The method of claim 1 , further comprising forming at least one further metal-containing electrode material in said first and second gate openings prior to forming said metal-containing electrode material.
3. The method of claim 1 , wherein forming said sacrificial material comprises forming a first sacrificial layer in and above said first and second gate electrode structures, forming a second sacrificial layer above said first sacrificial layer and patterning said first and second sacrificial layers.
4. The method of claim 3 , wherein patterning said first and second sacrificial layers comprises patterning said second sacrificial layer so as to preserve a portion thereof above said second gate electrode structure and performing an etch process so as to commonly remove said second sacrificial layer and a portion of said first sacrificial layer.
5. The method of claim 4 , wherein performing said etch process comprises performing a plasma assisted etch process.
6. The method of claim 1 , wherein forming said sacrificial material comprises forming a first sacrificial layer above said first and second gate electrode structures, forming a resist mask above said first sacrificial layer so as to expose said first sacrificial layer above said first gate electrode structure and modifying at least an exposed portion of said first sacrificial layer so as to obtain a second sacrificial layer.
7. The method of claim 6 , wherein modifying at least an exposed portion of said first sacrificial layer comprises removing said resist mask by using a wet chemical etch recipe that oxidizes at least said exposed portion of said first sacrificial layer.
8. The method of claim 6 , further comprising removing said second sacrificial layer by performing a wet chemical etch process.
9. The method of claim 1 , wherein one of said first and second transistors is a P-channel transistor and the other one of said first and second transistors is an N-channel transistor.
10. The method of claim 9 , wherein a width of at least one of said first and second gate openings is 40 nm or less.
11. The method of claim 1 , wherein a common material removal process is used to remove said entirety of said metal-containing electrode material from said first gate opening and said upper portion of said metal-containing electrode material from said upper portion of said second gate opening.
12. The method of claim 1 , wherein a common material removal process is used to expose at least said upper portion of said metal-containing electrode material in said upper portion of said second gate opening and substantially said entirety of said metal-containing electrode material in said first gate opening.
13. A method of forming gate electrode structures, the method comprising:
forming a first gate opening in a first gate electrode structure and a second gate opening of a second gate electrode structure;
forming a first metal-containing material layer on surface areas of said first and second gate openings;
forming a second metal-containing material layer on said first metal-containing material layer;
removing substantially an entirety of said second metal-containing material layer from said first gate opening and an upper portion of said second metal-containing material layer from an upper portion of said second gate opening during a common material removal process while preserving a lower portion of said second metal-containing material layer at a lower portion of said second gate opening; and
forming an electrode metal on said first metal-containing material layer and on said lower portion of said second metal-containing material layer.
14. The method of claim 13 , wherein removing said second metal-containing material layer comprises forming an etch mask from a sacrificial fill material selectively in said lower portion of said second gate opening.
15. The method of claim 14 , wherein forming said etch mask comprises depositing said sacrificial fill material, forming a second etch mask above said sacrificial fill material so as to expose said sacrificial fill material above said first gate electrode structure and removing said second etch mask and at least an exposed portion of said sacrificial fill material by performing a plasma assisted etch process.
16. The method of claim 14 , wherein forming said etch mask comprises depositing said sacrificial fill material, forming a second etch mask above said sacrificial fill material so as to expose said sacrificial fill material above said first gate electrode structure, modifying at least an exposed portion of said sacrificial fill material and removing said second etch mask and at least said exposed portion of said sacrificial fill material.
17. The method of claim 16 , wherein modifying at least an exposed portion of said sacrificial fill material and removing said second etch mask comprises performing a common wet chemical process.
18. The method of claim 17 , wherein said common wet chemical process is performed by using a mixture of sulfuric acid and hydrogen peroxide.
19. The method of claim 16 , wherein at least said exposed portion of said sacrificial fill material is removed by a wet chemical process after removal of said second etch mask.
20. A method, comprising:
forming a metal-containing electrode material in a first gate opening of a first gate electrode structure of a first transistor and in a second gate opening of a second gate electrode structure of a second transistor;
forming a sacrificial material selectively in said second gate opening so as to cover a portion of said metal-containing electrode material at a bottom of said second gate opening while exposing said metal-containing electrode material in an upper portion of said second gate opening and in said first gate opening, wherein forming said sacrificial material selectively in said second gate opening comprises:
forming a first sacrificial layer in said first and second gate openings and above said first and second gate electrode structures;
forming a second sacrificial layer above said first sacrificial layer;
patterning said second sacrificial layer so as to preserve a portion thereof above said second gate electrode structure; and
performing an etch process so as to commonly remove said second sacrificial layer and a portion of said first sacrificial layer;
removing said exposed metal-containing electrode material from said first gate opening while using said sacrificial material as an etch mask so as to preserve said metal-containing electrode material at said bottom of said second gate opening;
removing said sacrificial material from said second gate opening; and
forming a conductive fill material in said first and second gate openings.
21. A method of forming gate electrode structures, the method comprising:
forming a first gate opening in a first gate electrode structure and a second gate opening in a second gate electrode structure;
forming a first metal-containing material layer on surface areas of said first and second gate openings;
forming a second metal-containing material layer on said first metal-containing material layer;
removing said second metal-containing material layer from said first gate opening and from an upper portion of said second gate opening while preserving said second metal-containing material layer at a lower portion of said second gate opening, wherein removing said second metal-containing material layer comprises forming an etch mask from a sacrificial fill material selectively in said lower portion of said second gate opening, and wherein forming said etch mask comprises:
depositing a sacrificial fill material;
forming a second etch mask above said sacrificial fill material so as to expose said sacrificial fill material above said first gate electrode structure;
modifying at least an exposed portion of said sacrificial fill material; and
removing said second etch mask and at least said exposed portion of said sacrificial fill material; and
forming an electrode metal on said first metal-containing material layer and on said second metal-containing material layer preserved at said lower portion of said second gate opening.