CMP polishing solution and polishing method

1. A CMP polishing liquid, for polishing a metal, comprising:

a metal salt containing at least one type of metal selected from the group consisting of silver and metals of Groups 12 and 13,

1,2,4-triazole,

phosphoric acid,

hydrogen peroxide, and

abrasive grains,

wherein a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

2. The CMP polishing liquid according to claim 1 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

3. The CMP polishing liquid according to claim 1 , which is for polishing of a palladium layer.

4. The CMP polishing liquid according to claim 1 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

5. The CMP polishing liquid according to claim 1 , wherein 1,2,4-triazole coordinates with the metal to be polished to form a complex.

6. A polishing method comprising a step of polishing at least a palladium layer with a polishing cloth while supplying a CMP polishing liquid between the palladium layer of a substrate and the polishing cloth,

wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of silver and metals of Groups 12 and 13, 1,2,4-triazole, phosphoric acid, hydrogen peroxide and abrasive grains,

a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

7. The polishing method according to claim 6 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

8. The polishing method according to claim 6 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

9. The polishing method according to claim 6 , wherein 1,2,4-triazole coordinates with palladium of the palladium layer to form a complex.

10. A CMP polishing liquid comprising:

a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13,

1,2,4-triazole,

phosphoric acid,

hydrogen peroxide and abrasive grains, wherein

pH of the CMP polishing liquid is not greater than 5, and

a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

11. The CMP polishing liquid according to claim 10 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

12. The CMP polishing liquid according to claim 10 , which is for polishing of a palladium layer.

13. The CMP polishing liquid according to claim 10 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

14. The CMP polishing liquid according to claim 10 , wherein 1,2,4-triazole coordinates with the metal to be polished to form a complex.

15. A polishing method comprising a step of polishing at least a palladium layer with a polishing cloth while supplying a CMP polishing liquid between the palladium layer of a substrate and the polishing cloth,

wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, phosphoric acid, hydrogen peroxide and abrasive grains,

pH of the CMP polishing liquid is not greater than 5,

a content of the metal salt is 2×10 4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

16. The polishing method according to claim 15 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

17. The polishing method according to claim 15 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

18. The polishing method according to claim 15 , wherein 1,2,4-triazole coordinates with palladium of the palladium layer to form a complex.

19. A polishing method comprising the steps of:

preparing a substrate having at least a palladium layer and a metal layer selected from the group consisting of a nickel layer, a tantalum layer and a cobalt layer;

polishing at least the palladium layer and the metal layer with a polishing cloth while supplying a CMP polishing liquid between a side of the palladium layer of the substrate and the polishing cloth, and

wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, phosphoric acid, hydrogen peroxide and abrasive grains,

a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

20. The polishing method according to claim 19 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

21. The polishing method according to claim 19 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

22. The polishing method according to claim 19 , wherein 1,2,4-triazole coordinates with palladium of the palladium layer to form a complex.