IP Library Granted Patent US 8,815,125
Granted Patent B2
US 8,815,125 · App. 13/528,325 · Granted Aug 26, 2014

Method of manufacturing a resistor paste

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Quick Facts
Patent No.
US 8,815,125
App. No.
13/528,325
Granted
Aug 26, 2014
Kind
B2
Abstract

A method of manufacturing a resistor paste comprising steps of: (a) preparing a basic resistor paste comprising, (i) a conductive powder, (ii) a first glass frit, and (iii) a first organic medium; and (b) preparing a glass paste as a TCR driver comprising, (iv) a second glass frit comprising manganese oxide, and (v) a second organic medium, (c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.

Claims (19)

1. A method of manufacturing a resistor paste comprising steps of:

(a) preparing a basic resistor paste comprising

(i) a conductive powder,

(ii) a first glass frit, and

(iii) a first organic medium;

(b) preparing a glass paste as a TCR driver comprising,

(iv) a second glass frit comprising manganese oxide, and

(v) a second organic medium; and

(c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.

2. The method of manufacturing a resistor paste of claim 1 , wherein the manganese oxide is 3 to 69 weight percent, based on the weight of the second glass frit.

3. The method of manufacturing a resistor paste of claim 1 , wherein the second glass frit further comprises SiO 2 , B 2 O 3 , Al 2 O 3 or a mixture thereof.

4. The method of manufacturing a resistor paste of claim 1 , wherein the second glass frit is 10 to 60 wt % based on the weight of the glass paste.

5. The method of manufacturing a resistor paste of claim 1 , wherein the glass paste further comprises a third glass frit with softening point of 700 to 950° C.

6. The method of manufacturing a resistor paste of claim 5 , wherein the third glass frit is an alkali earth-silicate glass frit comprising a metal oxide selected from the group consisting of silicon oxide (SiO 2 ), calcium oxide (CaO), boron oxide (B 2 O 3 ), barium oxide (BaO) and a mixture thereof.

7. The method of manufacturing a resistor paste of claim 1 , wherein the conductive powder comprises ruthenium pyrochlore oxide, a ruthenium oxide, silver, palladium, copper, carbon, or a mixture thereof.

8. A method of manufacturing a thick-film chip resistor, comprising:

applying on a substrate a resistor paste prepared according to claim 1 ; and

firing the resistor paste to obtain a thick-film chip resistor.

9. A thick-film chip resistor made by the method of claim 8 .

Assignments (4)
CHANGE OF NAME Recorded Mar 20, 2025
From: DU PONT CHINA LIMITED
To: CELANESE MERCURY HOLDINGS INC.
Reel/Frame 070567/0231 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2022
From: DUPONT ELECTRONICS, INC.
To: DU PONT CHINA LIMITED
Reel/Frame 062201/0889 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2019
From: E. I. DU PONT DE NEMOURS AND COMPANY
To: DUPONT ELECTRONICS, INC.
Reel/Frame 049583/0269 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2012
From: OGATA, YUKO
To: E. I. DU PONT DE NEMOURS AND COMPANY
Reel/Frame 028549/0317 →