Semiconductor Device and Method of Forming Wafer Level Multi-Row Etched Lead Package
A semiconductor device has a base carrier having first and second opposing surfaces. The first surface of the base carrier is etched to form a plurality of cavities and multiple rows of base leads between the cavities extending between the first and second surfaces. A second conductive layer is formed over the second surface of the base carrier. A semiconductor die is mounted within a cavity of the base carrier. A first insulating layer is formed over the die and first surface of the base carrier and into the cavities. A first conductive layer is formed over the first insulating layer and first surface of the base carrier. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second surface of the base carrier is removed to expose the first insulating layer and electrically isolate the base leads.
1 . A semiconductor device, comprising:
a base carrier including a plurality of base leads and a cavity in the base carrier disposed between the base leads;
a first semiconductor die mounted within the cavity of the base carrier;
a first insulating layer formed in the cavity around the first semiconductor die and base leads;
a conductive layer formed over the first insulating layer and base leads; and
a second insulating layer formed over the first insulating layer and conductive layer.
2 . The semiconductor device of claim 1 , wherein a portion of the base carrier is removed to electrically isolate the base leads.
3 . The semiconductor device of claim 1 , wherein a portion of the base carrier is disposed under the first semiconductor die.
4 . The semiconductor device of claim 1 , further including a shielding layer formed over the second insulating layer.
5 . The semiconductor device of claim 1 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads.
6 . The semiconductor device of claim 1 , further including a plurality of the semiconductor devices electrically connected through the conductive layer and base leads.
7 . A semiconductor device, comprising:
a base carrier including a plurality of base leads and a cavity in the base carrier disposed between the base leads;
a first semiconductor die mounted within the cavity of the base carrier;
a first insulating layer formed in the cavity around the first semiconductor die; and
a conductive layer formed over the first insulating layer and base leads.
8 . The semiconductor device of claim 7 , further including a second insulating layer formed over the first insulating layer and conductive layer.
9 . The semiconductor device of claim 8 , further including a shielding layer formed over the second insulating layer.
10 . The semiconductor device of claim 7 , wherein a portion of the base carrier is removed to electrically isolate the base leads.
11 . The semiconductor device of claim 7 , wherein a portion of the base carrier is disposed under the first semiconductor die.
12 . The semiconductor device of claim 7 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads.
13 . The semiconductor device of claim 7 , further including a plurality of the semiconductor devices electrically connected through the conductive layer and base leads.
14 . A semiconductor device, comprising:
a base carrier including a plurality of base leads and a cavity in the base carrier disposed between the base leads;
a first semiconductor die mounted within the cavity of the base carrier;
a first insulating layer formed in the cavity around the first semiconductor die;
a first conductive layer formed over the first insulating layer and base leads; and
a second conductive layer formed over the base carrier.
15 . The semiconductor device of claim 14 , further including a second insulating layer formed over the first insulating layer and first conductive layer.
16 . The semiconductor device of claim 15 , further including a shielding layer formed over the second insulating layer.
17 . The semiconductor device of claim 14 , wherein a portion of the base carrier is removed to electrically isolate the base leads.
18 . The semiconductor device of claim 14 , wherein a portion of the base carrier is disposed under the first semiconductor die.
19 . The semiconductor device of claim 14 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads.
20 . The semiconductor device of claim 14 , further including a plurality of the semiconductor devices electrically connected through the first conductive layer and base leads.
21 . A semiconductor device, comprising:
a first semiconductor die;
a plurality of base leads disposed around the first semiconductor die;
a first insulating layer formed around the first semiconductor die and base leads;
a conductive layer formed over the first insulating layer and base leads; and
a second insulating layer formed over the first insulating layer and conductive layer.
22 . The semiconductor device of claim 21 , further including a shielding layer formed over the second insulating layer.
23 . The semiconductor device of claim 21 , further including a second semiconductor die mounted over the first semiconductor die and electrically connected to the first semiconductor die through the base leads.
24 . The semiconductor device of claim 21 , further including a plurality of the semiconductor devices electrically connected through the conductive layer and base leads.
25 . The semiconductor device of claim 21 , further including a plurality of bumps formed over the base leads.