Photomask defect correcting method and device
View Patent ↗A photomask defect correction method and device correct an opaque or a clear defect of a photomask. An opaque or clear defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam. The gas ions may be hydrogen ions, nitrogen ions, oxygen ions, fluorine ions or chlorine ions.
1. A photomask defect correction method for correcting a defect of a photmask, the defect correction method comprising:
an observation process of observing a defect in a portion of a photomask to be corrected and acquiring information of the observed defect for performing correction of the defect; and
a defect correction process of correcting the observed defect in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam generated by an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam,
wherein the gas ions are selected from the group consisting of hydrogen ions, nitrogen ions, oxygen ions, fluorine ions, and chlorine ions.
2. A photomask defect correction method according to claim 1 ; wherein the gas ions are oxygen ions.
3. A photomask defect correction method according to claim 1 ; wherein the gas ions are nitrogen ions.
4. A photomask defect correction device for correcting a defect of a photomask using a focused ion beam, the defect correction device comprising:
an ion beam irradiation system for irradiating a focused gas ion beam toward a portion of a photomask to be corrected, the ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam;
a gas supply system for supplying to a vicinity of the portion of the photomask to be corrected one of an etching rate-increasing gas for correcting an opaque defect of the portion of the photomask to be corrected and a light-shielding film material gas for correcting a clear defect of the portion of the photomask to be corrected;
a detector that detects secondary charged particles emitted from the portion of the photomask to be corrected by the irradiation of the focused gas ion beam from the ion beam irradiation system; and
an image acquiring unit that acquires an image of the portion of the photomask to be corrected based on the detection by the detector.
5. A photomask defect correction device according to claim 4 ; further comprising an electron beam irradiation unit for irradiating an electron beam to the portion of the photomask to be corrected to perform charge neutralization.
6. A photomask defect correction device according to claim 4 ; further comprising a transfer simulation unit for acquiring shape information on the portion of the photomask to be corrected from the image of the portion of the photomask to be corrected acquired by the image acquiring unit, for performing transfer simulation calculation based on the shape information, and for determining whether or not the correction of the portion of the photomask to be corrected is properly performed.
7. A photomask defect correction device according to claim 4 ; wherein the gas field ion source generates non-rare gas ions.
8. A photomask defect correction device according to claim 4 ; wherein the gas field ion source generates gas ions selected from the group consisting of hydrogen ions, nitrogen ions, oxygen ions, fluorine ions, and chlorine ions.
9. A photomask defect correction device according to claim 4 ; wherein the gas field ion source generates oxygen gas ions.
10. A photomask defect correction device according to claim 4 ; wherein the gas field ion source generates nitrogen gas ions.