Non-volatile semiconductor memory having multiple external power supplies
View Patent ↗A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
1. A method comprising:
receiving a first voltage, the first voltage received on a first power input of a non-volatile memory device, the first voltage being a voltage other than zero volts;
receiving a second voltage, the second voltage received on a second power input of the non-volatile memory device, and a magnitude of the second voltage being greater than a magnitude of the first voltage; and
via circuitry in the non-volatile memory device, converting the second voltage to:
a first internal voltage supporting erase operations within the non-volatile memory device; and
a second internal voltage supporting programming operations within the non-volatile memory device.
2. The method as in claim 1 , wherein the second voltage is Vpp.
3. The method as in claim 2 , wherein the first voltage is Vcc.
4. The method as in claim 2 , wherein Vpp is 12 volts.
5. The method as in claim 1 , further comprising:
powering input/output logic of the non-volatile memory device with the first voltage.
6. The method as in claim 5 , wherein the input/output logic enables access to data stored in a memory core of the non-volatile memory device.
7. The method as in claim 1 , wherein the non-volatile memory device is a flash memory device.
8. The method as in claim 7 , wherein the flash memory device is a NAND flash memory device.
9. The method as in claim 1 , wherein the second internal voltage is at least 2 volts less than the first internal voltage.
10. The method as in claim 1 , wherein the second internal voltage is at least 18 volts.
11. The method as in claim 1 , wherein the first internal voltage is at least 20 volts.
12. The method as in claim 1 , wherein the circuitry includes a plurality of charge pump circuits.
13. The method as in claim 1 , wherein the magnitude of the second voltage is at least double the magnitude of the first voltage.
14. The method as in claim 1 , wherein the programming operations are in accordance with Folwer-Nordheim (F-N) tunneling.
15. The method as in claim 1 , wherein both the first and second internal voltages are at least several volts greater than the second voltage.
16. The method as in claim 1 , wherein the first internal voltage is greater than the second voltage, the second internal voltage is greater than the second voltage, and the first internal voltage is greater than the second internal voltage.
17. The method as in claim 1 , further comprising regulating the first internal voltage and the second internal voltage.
18. The method as in claim 1 , further comprising:
receiving the first internal voltage; and
generating a first output to indicate whether the first internal voltage is within first regulation.
19. The method as in claim 18 , further comprising generating a reference voltage, wherein the reference voltage is employed to facilitate the generating the first output.
20. The method as in claim 18 , further comprising:
receiving the second internal voltage; and
generating a second output to indicate whether the second internal voltage is within second regulation.
21. The method as in claim 1 , further comprising:
receiving the second internal voltage; and
generating an output to indicate whether the second internal voltage is within regulation.
22. The method as in claim 21 , further comprising generating a reference voltage, wherein the reference voltage is employed to facilitate the generating the output.