Dense finFET SRAM

1. A method for fabricating a semiconductor device, comprising:

patterning a first structure and a second structure on a semiconductor device;

applying a first angled ion implantation to the second structure such that the first structure is protected and a second angled ion implantation to the first structure such that the second structure is protected, wherein exposed portions of the first and second structures have an altered rate of oxidation;

performing oxidation to form thicker or thinner oxide portions on the exposed portions of the first and second structures relative to unexposed portions of the first and second structures;

removing oxide portions to an underlying layer of the first and second structures;

removing the first and second structures;

forming spacers about a periphery of remaining oxide portions;

removing the remaining oxide portions; and

patterning a layer below the spacers to form integrated circuit features.

2. The method as recited in claim 1 , wherein patterning the layer below the spacers to form integrated circuit features includes forming fins below the spacers.

3. The method as recited in claim 1 , wherein patterning the layer below the spacers to form integrated circuit features includes employing the spacers as a mask to form integrated circuit features.

4. The method as recited in claim 1 , wherein the first structure includes a first mandrel structure and the second structure includes a second mandrel structure.

5. The method as recited in claim 1 , wherein applying the first angled ion implantation to the second structure such that the first structure is protected and the second angled ion implantation to the first structure such that the second structure is protected includes selecting an angle of attack, direction of ion implantation and type of ions to be implanted to selectively modify the oxidation rate of exposed portions of the first and second structures.

6. The method as recited in claim 1 , wherein applying the first angled ion implantation to the second structure such that the first structure is protected includes forming a first mask over the first structure and wherein applying the second angled ion implantation to the first structure such that the second structure is protected includes forming a second mask over the second structure.

7. The method as recited in claim 1 , wherein applying the first angled ion implantation to the second structure such that the first structure is protected includes implanting the second structure with at least one of ions to enhance a rate of oxidation and ions to reduce a rate of oxidation.

8. The method as recited in claim 7 , wherein the ions to enhance the rate of oxidation includes fluorine ions.

9. The method as recited in claim 7 , wherein the ions to reduce the rate of oxidation includes nitrogen ions.

10. The method as recited in claim 1 , wherein applying the second angled ion implantation to the first structure such that the second structure is protected includes implanting the first structure with at least one of fluorine to enhance a rate of oxidation and nitrogen to reduce a rate of oxidation.

11. The method as recited in claim 1 , wherein applying the first angled ion implantation to the second structure such that the first structure is protected includes implanting the second structure with ions to enhance a rate of oxidation and applying the second angled ion implantation to the first structure such that the second structure is protected includes implanting the first structure with ions to reduce a rate of oxidation.

12. A method for fabricating a semiconductor device, comprising:

patterning a first mandrel structure and a second mandrel structure on a semiconductor device;

applying a first angled ion implantation to the second mandrel structure such that the first mandrel structure is protected and a second angled ion implantation to the first mandrel structure such that the second mandrel structure is protected, wherein exposed portions of the first and second mandrel structures have an enhanced rate of oxidation;

performing oxidation to form thick oxide portions on the exposed portions of the first and second mandrel structures relative to unexposed portions of the first and second mandrel structures;

removing oxide portions to an underlying layer of the first and second mandrel structures;

removing the first and second mandrel structures;

forming spacers about a periphery of remaining oxide portions;

removing the remaining oxide portions; and

patterning a layer below the spacers to form integrated circuit features.

13. The method as recited in claim 12 , wherein patterning the layer below the spacers to form integrated circuit features includes forming fins below the spacers.

14. The method as recited in claim 12 , wherein patterning the layer below the spacers to form integrated circuit features includes employing the spacers as a mask to form integrated circuit features.

15. The method as recited in claim 12 , wherein applying the first angled ion implantation to the second mandrel structure such that the first mandrel structure is protected and the second angled ion implantation to the first mandrel structure such that the second mandrel structure is protected includes selecting an angle of attack, direction of ion implantation and type of ions to be implanted to selectively modify the oxidation rate of exposed portions of the first and second mandrel structures.

16. The method as recited in claim 12 , wherein applying the first angled ion implantation to the second mandrel structure such that the first mandrel structure is protected includes implanting fluorine in exposed portions of the first mandrel structure and wherein applying the second angled ion implantation to the first mandrel structure such that the second mandrel structure is protected includes implanting fluorine in exposed portions of the second mandrel structure.