Altering capacitance of MIM capacitor having reactive layer therein
View Patent ↗Embodiments of a method include forming a metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode and an insulator layer between the first and second electrodes, the MIM capacitor also including a reactive layer; and altering the reactive layer to change a capacitive value of the MIM capacitor.
1. A metal-insulator-metal (MIM) capacitor comprising:
a first electrode;
a second electrode disposed proximate the first electrode;
an insulator layer between the first and second electrodes; and
a first reactive layer positioned proximate the insulator layer and configured to allow altering of the first reactive layer to change a capacitive value of the MIM capacitor, the first reactive layer including a tunable dielectric constant material.
2. The MIM capacitor of claim 1 , wherein the tunable dielectric constant material is positioned between the insulator layer and the first electrode.
3. The MIM capacitor of claim 1 , wherein the tunable dielectric constant material is positioned between the insulator layer and the second electrode.
4. The MIM capacitor of claim 1 , further comprising a second reactive layer distinct from the first reactive layer, the second reactive layer positioned proximate the insulator layer and including a tunable dielectric constant material.
5. The MIM capacitor of claim 4 , wherein the tunable dielectric constant material of the first reactive layer is positioned between the insulator layer and the first electrode, and
wherein the tunable dielectric constant material of the second reactive layer is positioned between the insulator layer and the second electrode.
6. The MIM capacitor of claim 1 , wherein the tunable dielectric constant material is selected from the group consisting of: barium-tantalum-oxide (BaTiO 3 ), lead-titanium-oxide (PbTiO 3 ), and potassium-niobium-oxide (KNbO 3 ).
7. The MIM capacitor of claim 1 , wherein the insulator layer has a thickness and a dielectric constant, prior to the altering of the first reactive layer, such that an initial capacitance value of the insulator layer is within +/−three standard deviations of a target capacitance value for the MIM capacitor.
8. The MIM capacitor of claim 1 , wherein the first reactive layer is configured to allow altering of the first reactive layer to change the capacitive value of the MIM capacitor by an external field.
9. The MIM capacitor of claim 1 , wherein the insulator layer overlies the second electrode and directly contacts the second electrode.
10. The MIM capacitor of claim 9 , wherein the first reactive layer overlies the insulator layer and directly contacts the insulator layer.
11. The MIM capacitor of claim 10 , wherein the first electrode overlies the first reactive layer and directly contacts the first reactive layer.
12. The MIM capacitor of claim 1 , wherein the altering allowed by the first reactive layer creates a dipole moment change in the first reactive layer to change a dielectric constant of the tunable dielectric constant material.
13. A metal-insulator-metal (MIM) capacitor comprising:
a first electrode;
a second electrode disposed proximate the first electrode;
an insulator layer between the first and second electrodes; and
a first reactive layer positioned between the insulator layer and the second electrode, the first reactive layer directly contacting the second electrode and configured to allow altering of the first reactive layer to change a capacitive value of the MIM capacitor, the first reactive layer including a tunable dielectric constant material,
wherein the altering allowed by the first reactive layer creates a dipole moment change in the first reactive layer to change a dielectric constant of the tunable dielectric constant material.
14. A metal-insulator-metal (MIM) capacitor comprising:
a first electrode;
a second electrode disposed proximate the first electrode;
an insulator layer between the first and second electrodes; and
a first reactive layer positioned proximate the insulator layer and configured to allow altering of the first reactive layer to change a capacitive value of the MIM capacitor, the first reactive layer including a tunable dielectric constant material,
wherein the tunable dielectric constant material is selected from the group consisting of: barium-tantalum-oxide (BaTiO 3 ), lead-titanium-oxide (PbTiO 3 ), and potassium-niobium-oxide (KNbO 3 ).