Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
View Patent ↗A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation in read voltage between different data states at which the memory cells may be read.
1. A method for operating a non-volatile storage device, comprising:
for each set of read compare voltages of a plurality of different sets of read compare voltages, performing multiple sensing operations that each sense a different page of data from a population of non-volatile storage elements; and
determining threshold voltage distributions for the population of non-volatile storage elements based on the multiple sensing operations.
2. The method of claim 1 , further comprising:
determining a new set of read compare voltages for distinguishing between threshold voltage distributions based on the determined threshold voltage distributions.
3. The method of claim 2 , further comprising:
reading data from the population of non-volatile storage elements using the new set of read compare voltages.
4. The method of claim 1 , wherein:
the non-volatile storage elements each store two bits of data such that each of the two bits of data are in different pages;
the threshold voltage distributions each correspond to one of four data states: a first data state, a second data state, a third data state and a fourth data state;
the first data state represents erased non-volatile storage elements;
the performing multiple sensing operations includes performing a first page read and a second page read;
the first page read includes sensing at one read compare level; and
the second page read includes sensing at two read compare levels.
5. The method of claim 4 , wherein the determining threshold voltage distributions comprises:
for each set of read compare voltages of the plurality of different sets of read compare voltages, determining how many non-volatile storage elements are in each data state based on the first page read and a second page read for the respective set of read compare voltages.
6. The method of claim 5 , wherein the determining how many non-volatile storage elements are in each data state comprises:
for at least a subset of data states, performing a logical operation on both bits of data for the non-volatile storage elements to determine results which indicate whether respective non-volatile storage element are in a state being tested for;
and counting the results for at least the subset of data states.
7. The method of claim 6 , wherein the determining threshold voltage distributions further comprises:
computing how many non-volatile storage elements are in each threshold voltage bin based on how many non-volatile storage elements were determined to be in each data state for different sets of read compare voltages.
8. The method of claim 1 , wherein the determining threshold voltage distributions further comprises:
for each set of read compare voltages of the plurality of different sets of read compare voltages, determining how many non-volatile storage elements are in each data state of a set of data states that correspond to the threshold voltage distributions based on the sensing operations; and
computing how many non-volatile storage elements are in each threshold voltage bin based on how many non-volatile storage elements were determined to be in each data state for different sets of read compare voltages.
9. The method of claim 1 , wherein:
multiple sensing operations each comprise applying a current read compare voltage to a selected non-volatile storage element, applying a particular voltage to a neighbor of the selected non-volatile storage element based on a current condition of the neighbor while applying the current read compare voltage to a selected non-volatile storage element and sensing a condition of the selected non-volatile storage element.
10. A non-volatile storage apparatus, comprising:
a population of non-volatile storage elements; and
one or more managing circuits in communication with the population of non-volatile storage elements;
for each set of read compare voltages of a plurality of different sets of read compare voltages, the one or more managing circuits perform multiple sensing operations that each sense a different page of data from a population of non-volatile storage elements;
the one or more managing circuits determine threshold voltage distributions for the population of non-volatile storage elements based on the multiple sensing operations.
11. The non-volatile storage apparatus of claim 10 , wherein:
the one or more managing circuits determine a new set of read compare voltages for distinguishing between threshold voltage distributions based on the determined threshold voltage distributions and read data from the population of non-volatile storage elements using the new set of read compare voltages.
12. The non-volatile storage apparatus of claim 10 , wherein:
for each set of read compare voltages of the plurality of different sets of read compare voltages, the one or more managing circuits determine how many non-volatile storage elements are in each data state of a set of data states that correspond to the threshold voltage distributions based on the multiple sensing operations.
13. The non-volatile storage apparatus of claim 12 , wherein:
the one or more managing circuits determine how many non-volatile storage elements are in each data state by, for at least a subset of data states, performing a logical operation on multiple bits of data for the non-volatile storage elements to determine results which indicate whether respective non-volatile storage elements are in a state being tested for and counting the results for at least the subset of data states.
14. The non-volatile storage apparatus of claim 13 , wherein:
the one or more managing circuits determine threshold voltage distributions for the population of non-volatile storage elements by computing how many non-volatile storage elements are in each threshold voltage bin based on how many non-volatile storage elements were determined to be in each data state for different sets of read compare voltages.
15. The non-volatile storage of claim 10 , wherein:
the population of non-volatile storage elements are flash memory cells connected to a common word line.