Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device
View Patent ↗A method includes forming a trench/via in a layer of insulating material, forming a first layer comprised of silicon or germanium on the insulating material in the trench/via, forming a copper-based seed layer on the first layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based nitride layer positioned between the copper-based conductive structure and the layer of insulating material, wherein the copper-based nitride layer contacts both of the copper-based conductive structure and the layer of insulating material.
1. A method, comprising:
forming a trench/via in a layer of insulating material;
forming a first layer comprised of silicon or germanium on said insulating material in at least said trench/via;
forming a copper-based seed layer on said first layer;
converting at least a portion of a thickness of said copper-based seed layer into a copper-based nitride layer;
depositing a bulk copper-based material above said copper-based nitride layer so as to overfill said trench/via; and
performing at least one chemical mechanical polishing process to remove excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure.
2. The method of claim 1 , wherein converting said at least a portion of a thickness of said copper-based seed layer into said copper-based nitride layer comprises converting substantially an entire thickness of said copper-based seed layer into said copper-based nitride layer.
3. The method of claim 1 , wherein said copper-based nitride layer is positioned between said copper-based conductive structure and said first layer.
4. The method of claim 1 , wherein said copper-based nitride layer is comprised of one of copper germanium nitride (CuxGeNy) or copper silicon nitride (CuxSiNy).
5. The method of claim 1 , wherein converting said at least a portion of a thickness of said copper-based seed layer into said copper-based nitride layer comprises performing an anneal process and a plasma treatment process in the presence of nitrogen or a nitrogen-containing material.
6. The method of claim 5 , wherein said plasma treatment process is performed after said anneal process has been completed.
7. The method of claim 5 , wherein said plasma treatment process is started at some point during said anneal process.
8. The method of claim 5 , wherein said anneal process is performed at a temperature that falls within the range of about 200-500° C.
9. The method of claim 5 , wherein said plasma treatment process is performed at a temperature that falls within the range of about 40-500° C.
10. The method of claim 9 , wherein nitrogen or ammonia is introduced into a process chamber where said plasma treatment process is performed during said plasma treatment process.
11. The method of claim 1 , wherein forming said first layer comprised of silicon or germanium comprises performing one of an ALD or CVD process to form said first layer comprised of silicon or germanium.
12. The method of claim 1 , wherein said bulk copper-based material is deposited on said copper-based nitride layer.
13. A method, comprising:
forming a trench/via in a layer of insulating material;
forming a first layer comprised of silicon or germanium on said insulating material in at least said trench/via;
forming a copper-based seed layer on said first layer;
converting at least a portion of a thickness of said copper-based seed layer into a copper-based nitride layer, wherein said copper-based nitride layer is comprised of one of copper germanium nitride (CuxGeNy) or copper silicon nitride (CuxSiNy);
depositing a bulk copper-based material above said copper-based nitride layer so as to overfill said trench/via; and
performing at least one chemical mechanical polishing process to remove excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure, wherein said copper-based nitride layer is positioned between said copper-based conductive structure and said first layer.
14. The method of claim 13 , wherein converting said at least a portion of a thickness of said copper-based seed layer into said copper-based nitride layer comprises converting substantially an entire thickness of said copper-based seed layer into said copper-based nitride layer.
15. The method of claim 13 , wherein converting said at least a portion of a thickness of said copper-based seed layer into said copper-based nitride layer comprises performing an anneal process and a plasma treatment process in the presence of nitrogen or a nitrogen-containing material.
16. The method of claim 15 , wherein said plasma treatment process is performed after said anneal process has been completed.
17. The method of claim 15 , wherein said plasma treatment process is started at some point during said anneal process.
18. The method of claim 15 , wherein said anneal process is performed at a temperature that falls within the range of about 200-500° C.
19. The method of claim 15 , wherein said plasma treatment process is performed at a temperature that falls within the range of about 40-500° C.
20. The method of claim 19 , wherein nitrogen or ammonia is introduced into a process chamber where said plasma treatment process is performed during said plasma treatment process.
21. The method of claim 13 , wherein said bulk copper-based material is deposited on said copper-based nitride layer.